25TTS...SPbF High Voltage Series
Vishay High Power Products
Surface Mountable Phase
Control SCR, 16 A
Anode
2
DESCRIPTION/FEATURES
The 25TTS...SPbF High Voltage Series of silicon
Available
controlled rectifiers are specifically designed for
RoHS*
medium power switching and phase control
COMPLIANT
applications. The glass passivation technology
used has reliable operation up to 125 °C junction
temperature.
Typical applications are in input rectification (soft start) and
these products are designed to be used with Vishay HPP
input diodes, switches and output rectifiers which are
available in identical package outlines.
This product has been designed and qualified for industrial
level and lead (Pb)-free (“PbF” suffix).
D
2
PAK
1
3
Cathode Gate
PRODUCT SUMMARY
V
T
at 16 A
I
TSM
V
RRM
< 1.25 V
300 A
800 to 1600 V
OUTPUT CURRENT IN TYPICAL APPLICATIONS
APPLICATIONS
NEMA FR-4 or G10 glass fabric-based epoxy
with 4 oz. (140 µm) copper
Aluminum IMS, R
thCA
= 15 °C/W
Aluminum IMS with heatsink, R
thCA
= 5 °C/W
Note
• T
A
= 55 °C, T
J
= 125 °C, footprint 300 mm
2
SINGLE-PHASE BRIDGE
3.5
8.5
16.5
THREE-PHASE BRIDGE
5.5
13.5
25.0
A
UNITS
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
I
T(AV)
I
RMS
V
RRM
/V
DRM
I
TSM
V
T
dV/dt
dI/dt
T
J
16 A, T
J
= 25 °C
TEST CONDITIONS
Sinusoidal waveform
VALUES
16
25
800 to 1600
300
1.25
500
150
- 40 to 125
UNITS
A
V
A
V
V/µs
A/µs
°C
VOLTAGE RATINGS
PART NUMBER
V
RRM
, MAXIMUM PEAK
REVERSE VOLTAGE
V
800
1200
1600
V
DRM
, MAXIMUM PEAK
DIRECT VOLTAGE
V
800
1200
1600
10
I
RRM
/I
DRM
,
AT 125 °C
mA
25TTS08SPbF
25TTS12SPbF
25TTS16SPbF
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 94383
Revision: 06-Aug-08
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
1
25TTS...SPbF High Voltage Series
Vishay High Power Products
Surface Mountable Phase
Control SCR, 16 A
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average on-state current
Maximum RMS on-state current
Maximum peak, one-cycle,
non-repetitive surge current
Maximum I
2
t for fusing
Maximum I
2
√t
for fusing
Maximum on-state voltage drop
On-state slope resistance
Threshold voltage
Maximum reverse and direct leakage current
SYMBOL
I
T(AV)
I
RMS
I
TSM
I
2
t
I
2
√t
V
TM
r
t
V
T(TO)
I
RM
/I
DM
I
H
I
L
dV/dt
dI/dt
10 ms sine pulse, rated V
RRM
applied
10 ms sine pulse, no voltage reapplied
10 ms sine pulse, rated V
RRM
applied
10 ms sine pulse, no voltage reapplied
t = 0.1 to 10 ms, no voltage reapplied
16 A, T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
25TTS08, 25TTS12
25TTS16
TEST CONDITIONS
T
C
= 93 °C, 180° conduction half sine wave
VALUES
TYP. MAX.
16
25
300
350
450
630
6300
1.25
12.0
1.0
V
R
= Rated V
RRM
/V
DRM
Anode supply = 6 V,
resistive load, initial I
T
= 1 A
-
100
0.5
10
100
150
mA
A
2
s
A
2
√s
V
mΩ
V
A
UNITS
Holding current
Maximum latching current
Maximum rate of rise of off-state voltage
Maximum rate of rise of turned-on current
Anode supply = 6 V, resistive load
200
500
150
V/µs
A/µs
TRIGGERING
PARAMETER
Maximum peak gate power
Maximum average gate power
Maximum peak positive gate current
Maximum peak negative gate voltage
SYMBOL
P
GM
P
G(AV)
+ I
GM
- V
GM
Anode supply = 6 V, resistive load, T
J
= - 10 °C
Maximum required DC gate current to trigger
I
GT
Anode supply = 6 V, resistive load, T
J
= 25 °C
Anode supply = 6 V, resistive load, T
J
= 125 °C
Anode supply = 6 V, resistive load, T
J
= - 10 °C
Maximum required DC gate voltage
to trigger
Maximum DC gate voltage not to trigger
Maximum DC gate current not to trigger
V
GT
Anode supply = 6 V, resistive load, T
J
= 25 °C
Anode supply = 6 V, resistive load, T
J
= 125 °C
V
GD
I
GD
T
J
= 125 °C, V
DRM
= Rated value
TEST CONDITIONS
VALUES
8.0
2.0
1.5
10
60
45
20
2.5
2.0
1.0
0.25
2.0
mA
V
mA
UNITS
W
A
V
SWITCHING
PARAMETER
Typical turn-on time
Typical reverse recovery time
Typical turn-off time
SYMBOL
t
gt
t
rr
t
q
T
J
= 25 °C
T
J
= 125 °C
TEST CONDITIONS
VALUES
0.9
4
110
µs
UNITS
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2
For technical questions, contact: diodes-tech@vishay.com
Document Number: 94383
Revision: 06-Aug-08
25TTS...SPbF High Voltage Series
Surface Mountable Phase
Control SCR, 16 A
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage
temperature range
Soldering temperature
Maximum thermal resistance,
junction to case
Typical thermal resistance,
junction to ambient (PCB mount)
Approximate weight
SYMBOL
T
J
, T
Stg
T
S
R
thJC
R
thJA (1)
For 10 s (1.6 mm from case)
DC operation
TEST CONDITIONS
VALUES
- 40 to 125
240
1.1
°C/W
40
2
0.07
25TTS08S
Marking device
Case style D
2
PAK (SMD-220)
25TTS12S
25TTS16S
Note
(1)
When mounted on 1" square (650 mm
2
) PCB of FR-4 or G-10 material 4 oz. (140 µm] copper 40 °C/W
For recommended footprint and soldering techniques refer to application note #AN-994
g
oz.
UNITS
°C
Vishay High Power Products
Document Number: 94383
Revision: 06-Aug-08
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
3
25TTS...SPbF High Voltage Series
Vishay High Power Products
Surface Mountable Phase
Control SCR, 16 A
Maximum Allowable Case T
empera ture (°C)
Maximum Averag e On-state Power Loss (W)
130
25T S S
T .. eries
R
thJC
(DC) = 1.1 °C/ W
35
30
25
20
RMS Limit
15
10
5
0
0
5
10
15
20
25
30
Avera ge On-sta te Current (A)
Conduction Period
120
DC
180°
120°
90°
60°
30°
Conduc tion Angle
110
30°
100
60°
90°
120°
180°
90
0
5
10
15
20
Average On-sta te Current (A)
25T S S
T .. eries
T
J
= 125°C
Fig. 1 - Current Rating Characteristics
Maximum Allowable Case T
emperature (°C)
130
Fig. 4 - On-State Power Loss Characteristics
350
120
ine
Pea k Half S Wave On-sta te Current (A)
25T S S
T .. eries
R
thJC
(DC) = 1.1 °C/ W
300
At Any R
ated Load Condition And With
Rated V
RRM
Applied Following S
urge.
Initial T = 125°C
J
@60 Hz 0.0083 s
@50 Hz 0.0100 s
110
Conduction Period
250
100
90
30°
80
0
5
90°
60° 120°
180°
10
15
20
DC
25
30
200
25T S S
T .. eries
150
1
10
100
Number Of Equal Amplitude Half Cyc le Current Puls (N)
es
Average On-sta te Current (A)
Fig. 2 - Current Rating Characteristics
Maximum Averag e On-state Power Loss (W)
25
180°
120°
90°
60°
30°
RMSLimit
Peak Half S Wa ve On-state Current (A)
ine
Fig. 5 - Maximum Non-Repetitive Surge Current
400
350
300
250
200
150
25T S S
T .. eries
100
0.01
20
15
Maximum Non Repetitive S
urge Current
Versus Pulse T
rain Duration. Control
Of Cond uc tion Ma y Not Be Ma inta ined.
Initia l T = 125°C
J
No Voltage Rea pp lied
Rated V
RRM
Reapp lied
10
Conduc tion Angle
5
25T S S
T .. eries
T
J
= 125°C
0
0
4
8
12
16
20
Avera ge On-state Current (A)
0.1
Pulse T
rain Duration (s)
1
Fig. 3 - On-State Power Loss Characteristics
Fig. 6 - Maximum Non-Repetitive Surge Current
www.vishay.com
4
For technical questions, contact: diodes-tech@vishay.com
Document Number: 94383
Revision: 06-Aug-08
25TTS...SPbF High Voltage Series
Surface Mountable Phase
Control SCR, 16 A
1000
Instantaneous On-state Current (A)
Vishay High Power Products
100
T
J
= 25°C
10
T
J
= 125°C
25T S S
T .. eries
1
0
1
2
3
4
5
Instantaneous On-state Voltage (V)
Fig. 7 - On-State Voltage Drop Characteristics
T
ransient T
hermal Imped anc e Z thJC (°C/W)
10
S
teady S
tate Value
(DC Opera tion)
1
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
S
ingle Pulse
25T S S
T .. eries
0.01
0.0001
0.1
0.001
0.01
0.1
1
10
S
quare Wave Pulse Duration (s)
Fig. 8 - Gate Characteristics
100
Instantaneous Gate Voltage (V)
R tangular gate pulse
ec
a)R ommended load line for
ec
rated di/ dt: 10 V, 20 ohms
tr = 0.5 µs tp >= 6 µs
,
b)Rec ommended load line for
<= 30% rated d i/ dt: 10 V, 65 ohms
10
tr = 1 µs tp >= 6 µs
,
(1)
(2)
(3)
(4)
(a )
(b)
PGM = 40 W, tp = 1 ms
PGM = 20 W, tp = 2 ms
PGM = 8 W, tp = 5 ms
PGM = 4 W, tp = 10 ms
T = -10 °C
J
T = 25 °C
J
J
T = 125 °C
1
(4)
(3)
(2)
(1)
VGD
IGD
0.1
0.001
0.01
25T S S
T .. eries
0.1
1
Frequency Limited by PG(AV)
10
100
Instantaneous Gate Current (A)
Fig. 9 - Thermal Impedance Z
thJC
Characteristics
Document Number: 94383
Revision: 06-Aug-08
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
5
