This material and the information herein is the property of
Fuji Electric Co.,Ltd. They shall be neither reproduced, copied,
lent, or disclosed in any way whatsoever for the use of any
third party nor used for the manufacturing purposes without
the express written consent of Fuji Electric Co.,Ltd.
DRAWN
(1200A/1200V-2in1 IGBT-Module)
MT5F16507
IGBT-Module
2MBI1200U4G-120
DWG.No.
CHECKED
DATE
14-Jul-05
14-Jul-05
NAME
T.Nishimura
H.Kakiki
Spec. No.
Type Name
Device Name
APPROVAL
T.Miyasaka
Specification
:
:
:
Tentative
(Under developmemt)
Fuji Electric Device Technology Co.,Ltd.
Matsumoto Factory
MT5F16507
1
14
H04-004-007
This material and the information herein is the property of
Fuji Electric Co.,Ltd. They shall be neither reproduced, copied,
lent, or disclosed in any way whatsoever for the use of any
third party nor used for the manufacturing purposes without
the express written consent of Fuji Electric Co.,Ltd.
Date
14-Jul-05
Classifi -
cation
enactment
-
-
Issued
date
Ind.
Content
Applied
date
Revised Recor ds
DWG.No.
Drawn
-
H.Kakiki
Checked
MT5F16507
Approved
T.Miyasaka
Tentative
(Under developmemt)
2
14
H04-004-006
This material and the information herein is the property of
Fuji Electric Co.,Ltd. They shall be neither reproduced, copied,
lent, or disclosed in any way whatsoever for the use of any
third party nor used for the manufacturing purposes without
the express written consent of Fuji Electric Co.,Ltd.
2. Equivalent circuit
1. Outline Drawing ( Unit : mm )
sense emitter
gate
sense collector
main emitter
Type Name : 2MBI1200U4G-120
main collector
main emitter
main collector
DWG.No.
gate
／ PKG.No.
M248
sense emitter
sense collector
MT5F16507
Tentative
(Under developmemt)
3
14
H04-004-003
Tentative
(Under developmemt)
3.Absolute Maximum Ratings ( at Tc= 25°C unless otherwise specified
）
Items
Collector-Emitter voltage
Gate-Emitter voltage
Symbols
VCES
VGES
Ic
Collector current
Icp
-Ic
-Ic pulse
Collector Power Dissipation
Junction temperature
Storage temperature
Isolation
voltage
between terminal and copper base *1
Pc
Tj
Tstg
Viso
Mounting
Screw Torque *2
Main Terminals
Sense Terminals
(*1) All terminals should be connected together when isolation test will be done.
(*2) Recommendable Value : Mounting 4.25~5.75 Nm (M6)
This material and the information herein is the property of
Fuji Electric Co.,Ltd. They shall be neither reproduced, copied,
lent, or disclosed in any way whatsoever for the use of any
third party nor used for the manufacturing purposes without
the express written consent of Fuji Electric Co.,Ltd.
Conditions
Maximum
Ratings
1200
±20
Units
V
V
Continuous
1ms
Tc=25°C
Tc=80°C
Tc=25°C
Tc=80°C
1600
1200
3200
2400
1200
2400
4960
150
-40 ~ +125
W
°C
VAC
Nm
A
1ms
1 device
AC : 1min.
2500
5.75
10
2.5
Main Terminals 8~10 Nm (M8)
Sense Terminals 1.7~2.5 Nm (M4)
4. Electrical characteristics ( at Tj= 25°C unless otherwise specified)
Items
Zero gate voltage
Collector current
Gate-Emitter
leakage current
Gate-Emitter
threshold voltage
Collector-Emitter
saturation voltage
Input capacitance
Turn-on
Symbols
ICES
IGES
VGE(th)
VCE(sat)
(main terminal)
Conditions
VGE = 0V
VCE = 1200V
VCE = 0V
VGE=±20V
VCE = 20V
Ic = 1200mA
VGE=15V
Ic = 1200A
Tj= 25°C
Tj=125°C
Tj= 25°C
Tj=125°C
Char acter istics
min.
typ.
max.
-
-
5.5
-
-
-
-
-
-
-
-
-
-
6.5
2.20
2.40
1.90
2.10
135
1.35
0.65
0.80
0.20
1.95
2.05
1.65
1.75
0.45
0.25
1.0
1600
7.5
2.35
-
2.05
-
-
-
-
-
-
2.10
-
1.80
-
-
-
Units
mA
nA
V
VCE(sat)
(sense terminal)
V
Cies
ton
tr
toff
tf
VF
(main terminal)
VCE=10V,VGE=0V,f=1MHz
Vcc = 600V
Ic = 1200A
VGE=±15V,Tj=125℃
Rgon = 3.3 Ω
Rgoff = 0.82 Ω
VGE=0V
IF = 1200A
IF = 1200A
Tj= 25°C
Tj=125°C
Tj= 25°C
Tj=125°C
nF
μs
Turn-off
Forward on voltage
-
-
-
-
-
-
-
VF
(sense terminal)
V
Reverse recovery
Lead resistance, terminal-chip *
(*)
trr
R lead
μs
mΩ
Biggest internal terminal resistance among arm.
DWG.No.
MT5F16507
4
14
H04-004-003
Tentative
(Under developmemt)
5. Thermal resistance characteristics
Items
Thermal resistance(1device)
Contact Thermal resistance(1device)
Symbols
Rth(j-c)
Rth(c-f)
IGBT
FWD
Conditions
Char acter istics
min.
typ.
max.
-
-
-
-
-
0.006
0.025
0.042
-
Units
°C/W
with Thermal Compound (*)
* This is the value which is defined mounting on the additional cooling fin with thermal compound.
6. Indication on module
Logo of pr oduction
Lot.No.
Sample.No.
2MBI1200U4G-120
1200A / 1200V
Place of manufactur ing (code)
7.Applicable category
This specification is applied to IGBT Module named 2MBI1200U4G-120 .
This material and the information herein is the property of
Fuji Electric Co.,Ltd. They shall be neither reproduced, copied,
lent, or disclosed in any way whatsoever for the use of any
third party nor used for the manufacturing purposes without
the express written consent of Fuji Electric Co.,Ltd.
8.Storage and transportation notes
・
The module should be stored at a standard temperature of 5 to 35°C and humidity of 45 to 75% .
・
Store modules in a place with few temperature changes in order to avoid condensation on the module surface.
・
Avoid exposure to corrosive gases and dust.
・
Avoid excessive external force on the module.
・
Store modules with unprocessed terminals.
・
Do not drop or otherwise shock the modules when transporting.
9. Definitions of switching time
90%
½
½
0V
L
0V
V
GE
t
r r
I
r r
90%
V
CE
Vcc
Ic
½
½
10%
90%
R
G
V
GE
V
CE
Ic
0V
0A
Ic
10%
V
CE
10%
t
r ( i )
t
r
t
o n
½
½
t
o f f
t
f
10. Packing and Labeling
Display on the packing box
- Logo of production
- Type name
- Lot No
- Products quantity in a packing box
DWG.No.
MT5F16507
5
14
H04-004-003
