SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2N3054 2N3054A
DESCRIPTION
·With TO-66 package
APPLICATIONS
·Designed for general purpose switching
and amplifier applications
PINNING (See Fig.2)
PIN
1
2
3
Base
Emitter
Collector
Fig.1 simplified outline (TO-66) and symbol
DESCRIPTION
Absolute maximum ratings(Ta=25
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
P
D
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Power dissipation
Junction temperature
Storage temperature
2N3054
2N3054A
T
C
=25
Open emitter
Open base
Open collector
CONDITIONS
VALUE
90
55
7
4
2
25
75
200
-65~200
UNIT
V
V
V
A
A
W
THERMAL CHARACTERISTICS
SYMBOL
R
th j-C
PARAMETER
2N3054
Thermal resistance junction to case
2N3054A
2.33
MAX
7.0
/W
UNIT
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Base -emitter on voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
Transition frequency
CONDITIONS
I
C
=0.1A ; I
B
=0
I
C
=0.5A ;I
B
=50mA
I
C
=3A; I
B
=1A
I
C
=0.5A ; V
CE
=4V
V
CE
=90V;V
BE(off)
=1.5V
T
C
=150
V
CE
=30V; I
B
=0
V
EB
=7V; I
C
=0
I
C
=0.1A ; V
CE
=10V
I
C
=1A ; V
CE
=2V
I
C
=0.2A ; V
CE
=10V;f=1MHz
2N3054 2N3054A
SYMBOL
V
CEO
V
CEsat-1
V
CEsat-2
V
BE
I
CEV
I
CEO
I
EBO
h
FE-1
h
FE-2
f
T
MIN
55
TYP.
MAX
UNIT
V
1.0
6.0
1.7
1.0
6.0
0.5
1.0
40
8
3.0
80
V
V
V
mA
mA
mA
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2N3054 2N3054A
Fig.2 Outline dimensions
3
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2N3054 2N3054A
4
