2N3960UB
Silicon NPN Transistor
Data Sheet
Description
Semicoa Semiconductors offers:
•
Screening and processing per MIL-PRF-19500
Appendix E
•
JAN level (2N3960UBJ)
•
JANTX level (2N3960UBJX)
•
JANTXV level (2N3960UBJV)
•
QCI to the applicable level
•
100% die visual inspection per MIL-STD-750 method
2072 for JANTXV
•
Radiation testing (total dose) upon request
Applications
•
General purpose
•
Low power switching transistor
•
NPN silicon transistor
Features
•
•
•
•
Hermetically sealed Cersot ceramic
Also available in chip configuration
Chip geometry 0003
Reference document:
MIL-PRF-19500/399
Benefits
Please contact Semicoa for special configurations
www.SEMICOA.com or (714) 979-1900
•
Qualification Levels: JAN, JANTX, and
JANTXV
•
Radiation testing available
Absolute Maximum Ratings
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Power Dissipation, T
A
= 25°C
Derate linearly above 25°C
Operating Junction Temperature
Storage Temperature
Symbol
V
CEO
V
CBO
V
EBO
P
T
T
J
T
STG
T
C
= 25°C unless otherwise specified
Rating
12
20
4.5
400
2.3
-65 to +200
-65 to +200
Unit
Volts
Volts
Volts
mW
mW/°C
°C
°C
Copyright 2002
Rev. D
Semicoa Semiconductors, Inc.
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
Page 1 of 2
www.SEMICOA.com
2N3960UB
Silicon NPN Transistor
Data Sheet
ELECTRICAL CHARACTERISTICS
characteristics specified at T
A
= 25°C
Off Characteristics
Parameter
Collector-Emitter Breakdown Voltage
Collector-Base Cutoff Current
Collector-Emitter Cutoff Current
Emitter-Base Cutoff Current
On Characteristics
Parameter
Symbol
h
FE1
h
FE2
h
FE3
h
FE4
V
BE1
V
BE2
V
CEsat1
V
CEsat2
Symbol
|h
FE
|
1
|h
FE
|
2
|h
FE
|
3
C
OBO
C
IBO
Test Conditions
I
C
= 1 mA, V
CE
= 1 Volts
I
C
= 10 mA, V
CE
= 1 Volts
I
C
= 30 mA, V
CE
= 1 Volts
I
C
= 10 mA, V
CE
= 1 Volts
T
A
= -55°C
V
CE
= 1 Volts, I
C
= 1 mA
V
CE
= 1 Volts, I
C
= 30 mA
I
C
= 1 mA, I
B
= 0.1 mA
I
C
= 30 mA, I
B
= 3 mA
Test Conditions
f = 100 MHz
V
CE
= 4 Volts, I
C
= 5 mA,
V
CE
= 4 Volts, I
C
= 10 mA,
V
CE
= 4 Volts, I
C
= 30 mA,
V
CB
= 4 Volts, I
E
= 0 mA,
100 kHZ < f < 1 MHz
V
EB
= 0.5 Volts, I
C
= 0 mA,
100 kHZ < f < 1 MHz
Symbol
V
(BR)CEO
I
CBO
I
CEX1
I
CEX2
I
CEX3
I
EBO
Test Conditions
I
C
= 10
µA
V
CB
= 20 Volts
V
CE
= 10Volts, V
BE
= 0.4Volts
V
CE
= 10Volts, V
BE
= 2 Volts
V
CE
= 10Volts, V
BE
= 2 Volts,
T
A
= 150°C
V
EB
= 4.5 Volts
Min
12
10
1
5
5
10
Typ
Max
Units
Volts
µA
µA
nA
µA
µA
Pulse Test: Pulse Width = 300
µs,
Duty Cycle
≤
2.0%
DC Current Gain
Min
40
60
30
30
Typ
Max
300
Units
Base-Emitter Voltage
Collector-Emitter Saturation Voltage
Dynamic Characteristics
Parameter
Magnitude – Common Emitter, Short
Circuit Forward Current Transfer Ratio
Open Circuit Output Capacitance
Open Circuit Input Capacitance
0.8
1.0
0.2
0.3
Min
13
14
12
2.5
2.5
Typ
Max
Volts
Volts
Units
pF
pF
Copyright 2002
Rev. D
Semicoa Semiconductors, Inc.
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
Page 2 of 2
www.SEMICOA.com
