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2N4402TA

Bipolar Transistors - BJT PNP Transistor General Purpose

器件类别:半导体    分立半导体   

厂商名称:ON Semiconductor(安森美)

厂商官网:http://www.onsemi.cn

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器件参数
参数名称
属性值
Product Attribute
Attribute Value
制造商
Manufacturer
ON Semiconductor(安森美)
产品种类
Product Category
Bipolar Transistors - BJT
RoHS
Details
安装风格
Mounting Style
Through Hole
封装 / 箱体
Package / Case
TO-92-3 Kinked Lead
Transistor Polarity
PNP
Configuration
Single
Collector- Emitter Voltage VCEO Max
40 V
Collector- Base Voltage VCBO
40 V
Emitter- Base Voltage VEBO
5 V
Collector-Emitter Saturation Voltage
0.75 V
Maximum DC Collector Current
0.6 A
最小工作温度
Minimum Operating Temperature
- 55 C
最大工作温度
Maximum Operating Temperature
+ 150 C
DC Current Gain hFE Max
150
高度
Height
5.33 mm
长度
Length
5.2 mm
系列
Packaging
Ammo Pack
宽度
Width
4.19 mm
Continuous Collector Current
0.6 A
DC Collector/Base Gain hfe Min
50
Pd-功率耗散
Pd - Power Dissipation
625 mW
工厂包装数量
Factory Pack Quantity
2000
单位重量
Unit Weight
0.006286 oz
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2N4402
2N4402
C
BE
TO-92
PNP General Purpose Amplifier
This device is designed for use as general purpose amplifiers
and switches requiring collector currents to 500 mA.
Absolute Maximum Ratings*
Symbol
V
CEO
V
CBO
V
EBO
I
C
T
J
, T
stg
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
TA = 25°C unless otherwise noted
Parameter
Value
40
40
5.0
600
-55 to +150
Units
V
V
V
mA
°C
Operating and Storage Junction Temperature Range
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1)
These ratings are based on a maximum junction temperature of 150 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
P
D
R
θJC
R
θJA
TA = 25°C unless otherwise noted
Characteristic
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Max
2N4402
625
5.0
83.3
200
Units
mW
mW/°C
°C/W
°C/W
©
2001 Fairchild Semiconductor Corporation
2N4402, Rev A
2N4402
PNP General Purpose Amplifier
(continued)
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CEX
I
BL
Collector-Emitter Breakdown Voltage*
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Base Cutoff Current
I
C
= 1.0 mA, I
B
= 0
I
C
= 100
µA,
I
E
= 0
I
E
= 100
µA,
I
C
= 0
V
CE
= 35 V, V
EB
= 0.4 V
V
CE
= 35 V, V
EB
= 0.4 V
40
40
5.0
0.1
0.1
V
V
V
µA
µA
ON CHARACTERISTICS*
h
FE
DC Current Gain
V
CE
= 1.0 V, I
C
= 1.0 mA
V
CE
= 1.0 V, I
C
= 10 mA
V
CE
= 2.0 V, I
C
= 150 mA
V
CE
= 2.0 V, I
C
= 500 mA
I
C
= 150 mA, I
B
= 15 mA
I
C
= 500 mA, I
B
= 50 mA
I
C
= 150 mA, I
B
= 15 mA
I
C
= 500 mA, I
B
= 50 mA
30
50
50
20
150
0.40
0.75
0.95
1.30
V
V
V
V
V
CE(
sat
)
V
BE(
sat
)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
0.75
SMALL SIGNAL CHARACTERISTICS
C
ob
C
ib
h
fe
h
fe
h
ie
h
re
h
oe
Output Capacitance
Input Capacitance
Small-Signal Current Gain
Small-Signal Current Gain
Input Impedance
Voltage Feedback Ratio
Output Admittance
V
CB
= 10 V, f = 140 kHz
V
EB
= 0.5 V, f = 140 kHz
I
C
= 20 mA, V
CE
= 10 V,
f = 100 MHz
I
C
= 1.0 mA, V
CE
= 10 V,
f = 1.0 kHz
1.5
30
0.75
0.10
1.0
250
7.5
8.0
100
kΩ
x10
µmhos
-4
8.5
30
pF
pF
SWITCHING CHARACTERISTICS
t
d
t
r
t
s
t
f
Delay Time
Rise Time
Storage Time
Fall Time
V
CC
= 30 V, I
C
=150 mA,
I
B1
= 15 mA, V
BE
( off )
= 2.0 V
V
CC
= 30 V, I
C
=150 mA,
I
B1
= I
B2
= 15 mA
15
20
225
30
ns
ns
ns
ns
*
Pulse Test: Pulse Width
300
µs,
Duty Cycle
2.0%
2N4402
PNP General Purpose Amplifier
(continued)
Typical Characteristics
V
CESAT
- COLLECTOR EMITTE R VOLTAGE (V)
h
FE
- TYPICAL PULSED CURRENT GAIN
Typical Pulsed Current Gain
vs Collector Current
500
V
CE
= 5V
Collector-Emitter Saturation
Voltage vs Collector Current
0.5
β
= 10
0.4
0.3
0.2
0.1
0
125
°
C
- 40
°
C
400
300
200
100
0
0.1
125 °C
25 °C
25 °C
- 40 °C
0.3
1
3
10
30
100
I
C
- COLLECTOR CURRENT (mA)
300
1
10
100
I
C
- COLLECTOR CURRE NT (mA)
500
V
BE( ON)
- BAS E EMITTER ON VOLTAGE (V)
V
BESAT
- BASE EMITTER VOLTAGE (V)
Base-Emitter Saturation
Voltage vs Collector Current
1
- 40
°
C
Base Emitter ON Voltage vs
Collector Current
1
0.8
0.6
0.4
0.2
0
0.1
- 40
°
C
0.8
0.6
0.4
0.2
0
25 °C
25 °C
125
°
C
β
= 10
125°C
V
CE
= 5V
1
10
100
I
C
- COLLECTOR CURRENT (mA)
500
1
10
I
C
- COLLECTOR CURRE NT (mA)
25
Collector-Cutoff Current
vs Ambient Temperature
I
CBO
- COLLE CTOR CURRENT (nA)
100
V
CB
= 35V
10
Input and Output Capacitance
vs Reverse Bias Voltage
20
CAPACITANCE (pF)
16
12
C ib
1
8
4
0
0.1
C ob
0.1
0.01
25
50
75
100
T
A
- AMBIE NT TEMP ERATURE (
°
C)
125
1
10
REVERSE BIAS VOLTAGE (V)
50
2N4402
PNP General Purpose Amplifier
(continued)
Typical Characteristics
(continued)
Switching Times
vs Collector Current
250
I
B1
= I
B2
=
200
V cc = 15 V
I
c
10
Turn On and Turn Off Times
vs Collector Current
500
I
B1
= I
B2
=
400
V cc = 15 V
I
c
10
TIME (nS)
TIME (nS)
150
100
tr
tf
ts
300
200
t off
50
td
100
0
10
t on
0
10
100
I
C
- COLLECTOR CURRENT (mA)
1000
100
I
C
- COLLECTOR CURRENT (mA)
1000
Rise Time vs Collector
and Turn On Base Currents
I
B1
- TURN 0N BASE CURRENT (mA)
50
P
D
- POWER DISSIPATION (W)
1
Power Dissipation vs
Ambient Temperature
20
10
5
30 ns
t r = 15 V
0.75
SOT-223
TO-92
0.5
SOT-23
0.25
2
60 ns
1
10
100
I
C
- COLLECTOR CURRENT (mA)
500
0
0
25
50
75
100
TEMPERATURE (
o
C)
125
150
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参数对比
与2N4402TA相近的元器件有:2N4402_J14Z、2N4402TFR_Q、2N4402BU、2N4402_D26Z、2N4402TAR、2N4402TF。描述及对比如下:
型号 2N4402TA 2N4402_J14Z 2N4402TFR_Q 2N4402BU 2N4402_D26Z 2N4402TAR 2N4402TF
描述 Bipolar Transistors - BJT PNP Transistor General Purpose Bipolar Transistors - BJT PNP Transistor General Purpose Bipolar Transistors - BJT PNP Transistor General Purpose Bipolar Transistors - BJT PNP Transistor General Purpose Bipolar Transistors - BJT Bipolar Transistors - BJT PNP Transistor General Purpose Bipolar Transistors - BJT PNP Transistor General Purpose
Product Attribute Attribute Value Attribute Value Attribute Value Attribute Value Attribute Value Attribute Value Attribute Value
制造商
Manufacturer
ON Semiconductor(安森美) ON Semiconductor(安森美) ON Semiconductor(安森美) ON Semiconductor(安森美) ON Semiconductor(安森美) ON Semiconductor(安森美) ON Semiconductor(安森美)
产品种类
Product Category
Bipolar Transistors - BJT Bipolar Transistors - BJT Bipolar Transistors - BJT Bipolar Transistors - BJT Bipolar Transistors - BJT Bipolar Transistors - BJT Bipolar Transistors - BJT
RoHS Details Details N Details N Details Details
安装风格
Mounting Style
Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
封装 / 箱体
Package / Case
TO-92-3 Kinked Lead TO-92-3 TO-92-3 TO-92-3 TO-92-3 TO-92-3 Kinked Lead TO-92-3 Kinked Lead
Transistor Polarity PNP PNP PNP PNP PNP PNP PNP
Configuration Single Single Single Single Single Single Single
Collector- Emitter Voltage VCEO Max 40 V 40 V 40 V 40 V 40 V 40 V 40 V
Collector- Base Voltage VCBO 40 V 40 V 40 V 40 V 40 V 40 V 40 V
Emitter- Base Voltage VEBO 5 V 5 V 5 V 5 V 5 V 5 V 5 V
Maximum DC Collector Current 0.6 A 0.6 A 0.6 A 0.6 A 0.6 A 0.6 A 0.6 A
最小工作温度
Minimum Operating Temperature
- 55 C - 55 C - 55 C - 55 C - 55 C - 55 C - 55 C
最大工作温度
Maximum Operating Temperature
+ 150 C + 150 C + 150 C + 150 C + 150 C + 150 C + 150 C
高度
Height
5.33 mm 4.58 mm 4.7 mm 4.7 mm 5.33 mm 5.33 mm 4.7 mm
长度
Length
5.2 mm 4.58 mm 4.7 mm 4.7 mm 5.2 mm 5.2 mm 4.7 mm
宽度
Width
4.19 mm 3.86 mm 3.93 mm 3.93 mm 4.19 mm 4.19 mm 3.93 mm
DC Collector/Base Gain hfe Min 50 50 30 50 30 50 50
Pd-功率耗散
Pd - Power Dissipation
625 mW 625 mW 625 mW 625 mW 625 mW 625 mW 625 mW
单位重量
Unit Weight
0.006286 oz 0.008466 oz 0.008466 oz 0.006314 oz 0.008466 oz 0.008466 oz 0.008466 oz
Collector-Emitter Saturation Voltage 0.75 V 0.75 V - 0.75 V - 0.75 V 0.75 V
DC Current Gain hFE Max 150 150 - 150 - 150 150
系列
Packaging
Ammo Pack Bulk Reel Bulk - Ammo Pack Reel
Continuous Collector Current 0.6 A 0.6 A 0.6 A 0.6 A - 0.6 A 0.6 A
工厂包装数量
Factory Pack Quantity
2000 3000 2000 1000 - 2000 2000
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