,
Line.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
2N4445 - 2N4448
Silicon Epitaxial Junction
N-Channel Field Effect Transistors
• LOW R D S - 4 Ohms TYPICAL
• LOW COD - 15 pfd TYPICAL
• HIGH loss - 400mA TYPICAL
ELECTRICAL DATA
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Drain to Gate Voltage
GaM to Source Voltage
Peak Forward Gata Currant
Peak Drain Currant
Power Dissipation (frc« air)
Derating Factor (fr«« air)
Junction Tamp. (Opir. & Store)
teed Temp.
(9
1/16" ± 1/32" from case)
SYMBOL
BVoao
BVaso
2N
4445
25
-25
100
400
400
2.3
2N
4446
26
•25
100
400
400
2.3
2N
4447
20
•20
100
400
400
2.3
2N
4448
20
•20
100
400
400
2.3
UNITS
Volts
Volts
lap
ID
Po
DP
TJ
TL
mA
mA
mW
mW/°C
-65°C to «200°C
240°Cfor10iec.
ELECTRICAL CHARACTERISTICS:
TA - 25°C (UNLESS OTHERWISE STATED)
PARAMETERS AND
CONDITIONS
Gata Leakage Current
VQS-15V. Vos = 0
Gate Leakage Current
Vos = 16V, Vos = 0, TA • 100°C
Drain Cutoff Current
Vos--10V,Vos = 5V
Drain Cutoff Current
Vos » -10V, Vos - 6V, TA 100°C
Pinch-Off Voltage
Vos - 6V, IDS 3nA
On Raslitance
VDS • 0,1V, Vos = 0
Dr.aln-Source "On" Voltage
lo «• 10mA, Vos * 0
Drain Current*
Vos • 2V, Vos= 0
Gate to Source Cap.
Vos - 20V
Gata to Drain Cap.
Voo = 20V
Turn On Time
1
Turn Off Time
1
SYMBOL
lass
loss
ID OFF
ID OFF
VPO
2N444S
2N4447
2N4446
2N4448
Min,
Typ
Max.
Min.
Typ.
Max. Min. Typ. Max. Min. Typ. Max.
UNITS
_
-
_
_
2.0
-X
„
—
_
_
3.0
0.6
3.0
0.6
10
5.0
50
-
25
25
-
-
™
_
_
„
2.0
—
_
100
—
_
—
_
_.
7.0
7,0
_
_
3.0
0.6
3.0
0.6
10
10
_
-
_
_
2.0
-
_
150
_
_
-
-
_
—
_
_
7.0
4.0
_'
_
18
18
36
35
3.0
0.6
3.0
0.6
10
6.0
60
_
25
25
-
-
_
-
_
_
2.0
-^
—
„
_
„
_
7.0
7.0
-_
_
3.0
0.6
3.0
0.6
10
12
120
_
25
25
-
-
nA
*iA
nA
f/A
7.0
4.0
_
Volts
Ohms
mV
mA
pfd
pfd
nS
nS
Ros
Vos (On)
—
150
_
_
-
-
-
18
18
too
_
loss
100
_
_
Cos
Coo
Td+Tr
Ts+Tf
18
18
35
35
25
25
-
-
18
18
_
35
35
-
-
-
-
36
35
'Pulu Measurement 1% Duty Cycle tO MS Max.
_ 'R_Q - 50O, Voo - 1.6V, Ho =• 150 O, V pul» - -10V,Pulse width 0.5»is min.. Vos - 0V
NJ Semi-Concluctors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
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