SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2N4901 2N4902 2N4903
DESCRIPTION
·With TO-3 package
·Complement to type 2N5067/5068/5069
·Low collector saturation voltage
APPLICATIONS
·For general–purpose switching
and power amplifier applications.
PINNING
PIN
1
2
3
Base
Emitter
Collector
Fig.1 simplified outline (TO-3) and symbol
DESCRIPTION
ABSOLUTE MAXIMUM RATINGS
(Ta=25
)
SYMBOL
PARAMETER
2N4901
V
CBO
Collector-base voltage
2N4902
2N4903
2N4901
V
CEO
Collector-emitter voltage
2N4902
2N4903
V
EBO
I
C
I
CM
I
B
P
D
T
j
T
stg
Emitter-base voltage
Collector current
Collector current-peak
Base current
Total power dissipation
Junction temperature
Storage temperature
T
C
=25
Open collector
Open base
Open emitter
CONDITIONS
VALUE
-40
-60
-80
-40
-60
-80
-5
-5
-10
-1
87.5
200
-65~200
V
A
A
A
W
V
V
UNIT
THERMAL CHARACTERISTICS
SYMBOL
R
(th) jc
PARAMETER
Thermal resistance junction to case
VALUE
2.0
UNIT
/W
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
2N4901
V
CEO(SUS)
Collector-emitter
sustaining voltage
2N4902
2N4903
V
CE(sat)-1
V
CE(sat)-2
V
BE(on)
I
CEO
I
CBO
I
CEX
I
EBO
h
FE-1
h
FE-2
f
T
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Base-emitter on voltage
Collector cut-off current
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
Transition frequency
I
C
=-1A; I
B
=-0.1A
I
C
=-5A ;I
B
=-1A
I
C
=-1A ; V
CE
=-2V
I
C
=-0.2A ;I
B
=0
2N4901 2N4902 2N4903
SYMBOL
CONDITIONS
MIN
-40
-60
-80
TYP.
MAX
UNIT
V
-0.4
-1.5
-1.2
-1.0
-0.1
-1.0
-2.0
-1.0
20
7
4
80
V
V
V
mA
mA
mA
mA
V
CE
=Rated V
CEO
; I
B
=0
V
CB
=Rated V
CBO
; I
E
=0
V
CE
= Rated V
CEO
; V
BE(off)
=1.5V
T
C
=150
V
EB
=-5V; I
C
=0
I
C
=-1A ; V
CE
=-2V
I
C
=-5A ; V
CE
=-2V
I
C
=-1A ; V
CE
=-10V
MHz
2
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2N4901 2N4902 2N4903
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
