2N5005
Silicon PNP Transistor
Data Sheet
Description
Complement to the 2N5004
Semicoa Semiconductors offers:
•
Screening and processing per MIL-PRF-19500
Appendix E
•
JAN level (2N5005J)
•
JANTX level (2N5005JX)
•
JANTXV level (2N5005JV)
•
QCI to the applicable level
•
100% die visual inspection per MIL-STD-750 method
2072 for JANTXV
•
Radiation testing (total dose) upon request
Applications
•
High-speed power-switching
•
Power Transistor
•
PNP silicon transistor
Features
•
•
•
•
Hermetically sealed TO-59 metal can
Also available in chip configuration
Chip geometry 9702
Reference document:
MIL-PRF-19500/535
Benefits
Please contact Semicoa for special configurations
www.SEMICOA.com or (714) 979-1900
Absolute Maximum Ratings
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current, Continuous
Power Dissipation, T
A
= 25°C
Derate linearly above 25°C
Power Dissipation, T
C
= 25°C
Derate linearly above 25°C
Thermal Resistance
Operating Junction Temperature
Storage Temperature
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
T
P
T
•
Qualification Levels: JAN, JANTX, and
JANTXV
•
Radiation testing available
T
C
= 25°C unless otherwise specified
Rating
80
100
5.5
5
2
11.4
58
331
88
3
-65 to +200
-65 to +200
Unit
Volts
Volts
Volts
A
W
mW/°C
W
mW/°C
°C/W
°C
°C
R
θJA
R
θJC
T
J
T
STG
Copyright 2002
Rev. C
Semicoa Semiconductors, Inc.
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
Page 1 of 2
www.SEMICOA.com
2N5005
Silicon PNP Transistor
Data Sheet
ELECTRICAL CHARACTERISTICS
characteristics specified at T
A
= 25°C
Off Characteristics
Parameter
Collector-Emitter Breakdown Voltage
Collector-Emitter Cutoff Current
Collector-Emitter Cutoff Current
Collector-Emitter Cutoff Current
Emitter-Base Cutoff Current
Thermal Impedance
On Characteristics
Parameter
Symbol
h
FE1
h
FE2
h
FE3
h
FE4
V
BE
V
BEsat1
V
BEsat2
V
CEsat1
V
CEsat2
Test Conditions
I
C
= 50 mA, V
CE
= 5 Volts
I
C
= 2.5 A, V
CE
= 5 Volts
I
C
= 5 A, V
CE
= 5 Volts
I
C
= 2.5 A, V
CE
= 5 Volts
T
A
= -55°C
V
CE
= 5 Volts, I
C
= 2.5 A
I
C
= 2.5 A, I
B
= 250 mA
I
C
= 5 A, I
B
= 500 mA
I
C
= 2.5 A, I
B
= 250 mA
I
C
= 5 A, I
B
= 500 mA
Symbol
V
(BR)CEO
I
CEO
I
CEX
I
CES1
I
CES2
I
EBO1
I
EBO2
θ
JC
Test Conditions
I
C
= 100 mA
V
CE
= 40 Volts
V
CE
= 60 Volts, V
EB
= 2 Volts,
T
A
= 150°C
V
CE
= 60 Volts
V
CE
= 100 Volts
V
EB
= 4 Volts
V
EB
= 5.5 Volts
Min
80
50
500
1
1
1
1
3.1
Typ
Max
Units
Volts
µA
µA
µA
mA
µA
mA
°C/W
Pulse Test: Pulse Width = 300
µs,
Duty Cycle
≤
2.0%
DC Current Gain
Min
50
70
40
25
Typ
Max
200
Units
Base-Emitter Voltage
Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Dynamic Characteristics
Parameter
Magnitude – Common Emitter, Short
Circuit Forward Current Transfer Ratio
Small Signal Short Circuit Forward
Current Transfer Ratio
Open Circuit Output Capacitance
Switching Characteristics
Saturated Turn-On Time
Rise Time
Fall Time
Saturated Turn-Off Time
1.45
1.45
2.20
0.75
1.50
Volts
Volts
Volts
Symbol
|h
FE
|
h
FE
C
OBO
t
ON
t
r
t
f
t
OFF
Test Conditions
V
CE
= 5 Volts, I
C
= 500 mA,
f = 10 MHz
V
CE
= 5 Volts, I
C
= 100 mA,
f = 1 kHz
V
CB
= 10 Volts, I
E
= 0 mA,
100 kHZ < f < 1 MHz
Min
7
50
Typ
Max
Units
250
pF
I
C
= 5 A, I
B1
=I
B2
= 500 mA,
V
BE
= 3.7 Volts, RL = 6
Ω
0.5
1.4
0.5
1.5
µs
Copyright 2002
Rev. C
Semicoa Semiconductors, Inc.
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
Page 2 of 2
www.SEMICOA.com
