SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2N5038 2N5039
DESCRIPTION
·With TO-3 package
·High speed
·Low collector saturation voltage
APPLICATIONS
·They are especially intended for high current
and fast switching applications
PINNING
PIN
1
2
3
Base
Emitter
Collector
Fig.1 simplified outline (TO-3) and symbol
DESCRIPTION
Absolute maximum ratings(Ta=
)
SYMBOL
V
CBO
PARAMETER
Collector-base voltage
2N5038
2N5039
2N5038
2N5039
CONDITIONS
Open emitter
VALUE
150
120
90
75
7
20
30
5
T
C
=25
140
200
-65~200
UNIT
V
V
CEO
V
EBO
I
C
I
CM
I
B
P
D
T
j
T
stg
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
Base current
Total Power Dissipation
Junction temperature
Storage temperature
Open base
Open collector
V
V
A
A
A
W
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal resistance junction to case
MAX
1.25
UNIT
/W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2N5038 2N5039
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter
sustaining voltage
2N5038
I
C
=0.2A ;I
B
=0
2N5039
2N5038
2N5039
I
C
=12A ;I
B
=1.2A
1.0
I
C
=10A ;I
B
=1A
I
C
=20A ;I
B
=5A
I
C
=20A ;I
B
=5A
I
C
=12A ; V
CE
=5V
1.8
2N5039
2N5038
I
CEO
Collector cut-off current
2N5039
2N5038
I
CEX
Collector cut-off current
2N5039
2N5038
I
EBO
Emitter cut-off current
2N5039
h
FE-1
DC current gain
2N5038
h
FE-2
DC current gain
2N5039
I
s/b
Second breakdown collector current
I
C
=10A ; V
CE
=5V
V
CE
=28V,
V
CE
=45V(t=1.0s Nonrepetitive)
5
0.9
A
I
C
=2A ; V
CE
=5V
I
C
=12A ; V
CE
=5V
20
100
50
V
EB
=5V; I
C
=0
15
250
V
CE
=55V; I
B
=0
V
CE
=140V; V
BE
=-1.5V
V
CE
=100V; V
BE
=-1.5V ;T
C
=150
V
CE
=110V; V
BE
=-1.5V
V
CE
=85V; V
BE
=-1.5V T
C
=150
5.0
10
5.0
10
5
mA
I
C
=10A ; V
CE
=5V
V
CE
=70V; I
B
=0
20
mA
V
2.5
3.3
V
V
V
75
CONDITIONS
MIN
90
V
TYP
MAX
UNIT
SYMBOL
V
CEO(SUS)
V
CEsat-1
Collector-emitter
saturation voltage
V
CEsat-2
V
BEsat
Collector-emitter saturation voltage
Base-emitter saturation voltage
2N5038
V
BE
Base-emitter on voltage
mA
Switching times
t
r
t
s
t
f
Rise time
Storage time
Fall time
For 2N5038
I
C
=12A ;I
B1
=- I
B2
=1.2A ;V
CC
=30V
For 2N5039
I
C
=10A ;I
B1
=- I
B2
=1A ;Vcc=30V
0.5
1.5
0.5
µs
µs
µs
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2N5038 2N5039
Fig.2 outline dimensions (unindicated tolerance:±0.10mm)
3
嵌入式系统
