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2N5088

50 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
50 mA, 30 V, NPN, 硅, 小信号晶体管, TO-92

器件类别:半导体    分立半导体   

厂商名称:CDIL

厂商官网:http://www.cdilsemi.com

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器件:2N5088

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器件参数
参数名称
属性值
端子数量
3
晶体管极性
NPN
最大集电极电流
0.0500 A
最大集电极发射极电压
30 V
状态
ACTIVE
包装形状
ROUND
包装尺寸
CYLINDRICAL
端子形式
WIRE
端子位置
BOTTOM
包装材料
PLASTIC/EPOXY
结构
SINGLE
元件数量
1
晶体管应用
AMPLIFIER
晶体管元件材料
SILICON
最大环境功耗
0.3500 W
晶体管类型
GENERAL PURPOSE SMALL SIGNAL
最小直流放大倍数
300
额定交叉频率
50 MHz
文档预览
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN SILICON EPITAXIAL TRANSISTORS
2N5088
2N5089
TO-92
CBE
E
BC
Amplifier Transistors
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
SYMBOL
2N5088
2N5089
UNITS
VCBO
35
30
V
Collector -Base Voltage
VCE0
30
25
V
Collector -Emitter Voltage
VEBO
4.5
V
Emitter -Base Voltage
IC
50
mA
Collector Current- Continuous
PD
625
mW
Power Dissipation@ Ta=25 deg C
5.0
mW/deg C
Derate Above 25 deg C
PD
1.5
W
Power Dissipation@ Tc=25 deg C
12
mW/deg C
Derate Above 25 deg C
Tj
150
deg C
Junction Temperature
Tstg
-55 to +150
deg C
Storage Temperature
THERMAL RESISTANCE
Rth(j-a) (1)
357
deg C/W
Junction to Ambient
Rth(j-c)
125
deg C/W
Junction to Case
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)
DESCRIPTION
SYMBOL
Min
Max
UNITS
VCEO*
IC=1mA, IB=0
30
-
V
Collector -Emitter Voltage
2N5088
25
-
V
2N5089
Collector -Base Voltage
VCBO
IC=100uA,IE=0
2N5088
2N5089
2N5088
2N5089
2N5088
2N5089
35
30
-
-
-
-
-
-
50
50
50
100
V
V
nA
nA
nA
nA
Collector-Cut off Current
ICBO
VCB=20V, IE=0
VCB=15V, IE=0
VEB=3.0V, IC=0
VEB=4.5V, IC=0
Emitter-Cut off Current
IEBO
Continental Device India Limited
Data Sheet
Page 1 of 4
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)
DESCRIPTION
SYMBOL
DC Current Gain
hFE
IC=100uA,VCE=5V
2N5088
2N5089
2N5088
2N5089
2N5088
2N5089
Min
300
400
350
450
300
400
-
-
>50
-
-
350
450
-
-
2N5088/89
Max
UNITS
900
1200
-
-
-
-
0.5
0.8
-
<4.0
<10
1400
1800
3.0
2.0
IC=1mA,VCE=5V
IC=10mA,VCE=5V*
Collector Emitter Saturation Voltage
Base Emitter on Voltage
DYNAMIC CHARACTERISTICS
Current Gain Bandwidth Product
Collector-Base Capacitance
Emitter-Base Capacitance
Small Signal Current Gain
VCE(Sat) IC=10mA, IB=1.0mA
VBE(on) * IC=10mA,VCE=5V
ft
Ccb
Ceb
hfe
IC=500uA,VCE=5V
f=20MHz
VCB=5V, f=100kHz
VEB=0.5V, f=100kHz
IC=1mA, VCE=5V
f=1kHz
IC=100uA, VCE=5V,
Rs=10kohms, f=10Hz
to 15.7 kHz
V
V
MHz
pF
pF
2N5088
2N5089
2N5088
2N5089
Noise Figure
NF
dB
dB
*Pulsed: pulse Duration =300us, Duty Cycle=2%
(1)Rth (j-a) is measured with the device soldered into a typical printed circuit board.
Continental Device India Limited
Data Sheet
Page 2 of 4
TO-92 Plastic Package
B
TO-92 Transistors on Tape and Ammo Pack
Amm o Pack Style
M EC H AN IC AL D ATA
Ad hesive Tape on To p Sid e
P
h
A
A1
(p)
FEE
D
C arrier
Strip
A
h
T
3 2 1
H1
H0
L
LA BE L
FL AT SIDE
8.2"
W2
Wo
W1
W
t1
K
t
F1
F
P2
Po
F2
Do
1 3"
1. 7
7"
D
3
E
2
1
ITEM
Flat S id e o f Tran sistor and
Ad hesive Tape Visib le
20 00 pcs./A m mo P ack
All dim ensions in m m unless specified otherw ise
SPEC IFICATIO N
SYM BO L
A1
A
T
P
Po
REM ARKS
M IN. NO M . M AX. TO L .
4.0
4.8
5.2
4.8
4.2
3.9
12.7
±1
12.7
± 0.3 CUM U LAT IVE PIT CH
ERRO R 1.0 m m /20
PITCH
6.35
± 0.4 TO BE M EASU RED AT
BOT TOM O F CLIN CH
+0.6
5.08
-0.2
1
0
AT TO P OF BO DY
18
± 0.5
6
± 0.2
9
+0.7
-0.5
0.5
± 0.2
16
± 0.5
23.25
11.0
4
± 0.2
1.2
t1 0.3 - 0.6
2.54
+0.4
-0.1
3
6N
D
G
A A
SEC AA
BOD Y W IDT H
BOD Y H EIG HT
BOD Y T HICKNESS
PITCH OF C OM PO NENT
FEED HO LE PIT CH
F
F
DIM
A
MIN.
4.32
4.45
3.18
0.41
0.35
MAX.
5.33
5.20
4.19
0.55
0.50
FEED HO LE CENTRE TO
CO M PONENT CENTRE
DISTAN CE BETW EEN O UTER
LEADS
CO M PONENT ALIGN M EN T
TAPE W IDTH
HO LD-DO W N TAPE W IDTH
HO LE PO SITIO N
HO LD-DO W N TAPE POSIT IO N
LEAD W IRE C LINCH HEIG HT
CO M PONENT HEIGHT
LENG TH O F SNIPPED LEADS
FEED HO LE DIAM ET ER
TO TAL TAPE THIC KNESS
LEAD - TO - LEAD DISTANCEF 1,
CLINC H HEIGHT
PULL - O UT F OR CE
P2
F
h
W
Wo
W1
W2
Ho
H1
L
Do
t
F2
H2
(P)
3 2 1
All diminsions in mm.
B
C
D
E
F
G
H
K
H
C
PIN CONFIGURATION
1. COLLECTOR
2. BASE
3. EMITTER
5 DEG
1.14
1.40
1.14
1.53
12.70
N OT ES
1 . M A X IM U M A L IG N M E N T D E V IAT IO N B E T W E E N L E A D S N O T T O B E G R E AT E R T H A N 0 .2 m m .
2 . M A X IM U M N O N -C U M U L AT IV E VA R IAT IO N B E T W E E N TA P E F E E D H O L E S S H A L L N O T E X C E E D 1 m m IN 2 0
P IT C H E S .
3 . H O L D D O W N TA P E N O T TO E X C E E D B E Y O N D T H E E D G E (S ) O F C A R R IE R TA P E A N D T H E R E S H A L L B E N O
E X P O S U R E O F A D H E S IV E .
4 . N O M O R E T H A N 3 C O N S E C U T IV E M IS S IN G C O M P O N E N T S A R E P E R M IT T E D .
5 . A TA P E T R A IL E R , H AV IN G AT L E A S T T H R E E F E E D H O L E S A R E R E Q U IR E D A F T E R T H E L A S T C O M P O N E N T.
6 . S P L IC E S S H A L L N O T IN T E R F E R E W IT H T H E S P R O C K E T F E E D H O L E S .
Packing Detail
PACKAGE
Details
TO-92 Bulk
TO-92 T&A
1K/polybag
2K/ammo box
STANDARD PACK
Net Weight/Qty
200 gm/1K pcs
645 gm/2K pcs
Size
3" x 7.5" x 7.5"
12.5" x 8" x 1.8"
Data Sheet
INNER CARTON BOX
Qty
5.0K
2.0K
Size
OUTER CARTON BOX
Qty
80.0K
32.0K
Gr Wt
23 kgs
12.5 kgs
17" x 15" x 13.5"
17" x 15" x 13.5"
Continental Device India Limited
Page 3 of 4
Notes
Disclaimer
The product information and the selection guides facilitate selection of the CDIL's Discrete Semiconductor Device(s) best suited
for application in your product(s) as per your requirement. It is recommended that you completely review our Data Sheet(s) so as
to confirm that the Device(s) meet functionality parameters for your application. The information furnished on the CDIL Web
Site/CD is believed to be accurate and reliable. CDIL however, does not assume responsibility for inaccuracies or incomplete
information. Furthermore, CDIL does not assume liability whatsoever, arising out of the application or use of any CDIL product;
neither does it convey any license under its patent rights nor rights of others. These products are not designed for use in life
saving/support appliances or systems. CDIL customers selling these products (either as individual Discrete Semiconductor
Devices or incorporated in their end products), in any life saving/support appliances or systems or applications do so at their own
risk and CDIL will not be responsible for any damages resulting from such sale(s).
CDIL strives for continuous improvement and reserves the right to change the specifications of its products without prior notice.
CDIL is a registered Trademark of
Continental Device India Limited
C-120 Naraina Industrial Area, New Delhi 110 028, India.
Telephone + 91-11-2579 6150, 5141 1112 Fax + 91-11-2579 5290, 5141 1119
email@cdil.com
www.cdilsemi.com
Continental Device India Limited
Data Sheet
Page 4 of 4
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参数对比
与2N5088相近的元器件有:2N5089。描述及对比如下:
型号 2N5088 2N5089
描述 50 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 50 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
端子数量 3 3
晶体管极性 NPN NPN
最大集电极电流 0.0500 A 0.0500 A
最大集电极发射极电压 30 V 25 V
状态 ACTIVE ACTIVE
包装形状 ROUND ROUND
包装尺寸 CYLINDRICAL CYLINDRICAL
端子形式 WIRE WIRE
端子位置 BOTTOM BOTTOM
包装材料 PLASTIC/EPOXY PLASTIC/EPOXY
结构 SINGLE SINGLE
元件数量 1 1
晶体管元件材料 SILICON SILICON
晶体管类型 GENERAL PURPOSE SMALL SIGNAL GENERAL PURPOSE SMALL SIGNAL
最小直流放大倍数 300 400
额定交叉频率 50 MHz 50 MHz
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