INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
2N5108
DESCRIPTION
·High
Current-Gain Bandwidth Product
: f
T
= 1200MHz (Min) @V
CE
= 10V,I
E
= 50mA
·Low
Saturation Voltage
·Good
Linearity of h
FE
APPLICATIONS
·Designed
for general purpose Class C amplifier applications
up to 1 GHz
ABSOLUTE MAXIMUM RATINGS (T
a
=25
℃
)
SYMBOL
PARAMETER
VALUE
UNIT
V
CBO
Collector-Base Voltage
55
V
V
CEO
Collector-Emitter Voltage
35
V
V
EBO
Emitter-Base Voltage
4
V
I
C
Collector Current
Collector Power Dissipation
@T
C
=25℃
0.4
A
3.5
W
P
C
Collector Power Dissipation
@T
a
=25℃
T
j
Junction Temperature
1.0
175
℃
T
stg
Storage Temperature Range
-55~175
℃
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
2N5108
MAX
UNIT
V
CE(
sat
)
Collector-Emitter Saturation Voltage
I
C
= 100mA; I
B
= 10mA
0.5
V
I
CBO
Collector Cutoff Current
V
CB
= 40V; I
E
= 0
0.1
mA
I
EBO
Emitter Cutoff Current
V
EB
= 3V; I
C
= 0
0.1
mA
h
FE
DC Current Gain
I
C
= 10mA; V
CE
= 10V
40
150
f
T
Current-Gain—Bandwidth Product
I
C
= 50mA;V
CE
= 10V;f= 200MHz
1200
MHz
C
OB
Output Capacitance
I
E
= 0;V
CB
= 28V; f
test
= 1.0MHz
3.3
pF
isc Website：www.iscsemi.cn
