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2N5490

POWER TRANSISTOR
功率晶体管

器件类别：半导体分立半导体

厂商名称：Jinmei

厂商官网：http://www.jmnic.com/

参数预览参数对比

器件参数

参数名称

属性值

状态

Active

文档预览

Product Specification

www.jmnic.com

Silicon NPN Power Transistors

DESCRIPTION

・

・With

TO-220 package

・High

power dissipation

APPLICATIONS

・For

used in medium power and

amplifier applications

PINNING

PIN

1

2

3

Base

Collector;connected to

mounting base

Emitter

DESCRIPTION

2N5490 2N5492 2N5494 2N5496

Absolute maximum ratings(Ta=25

℃)

SYMBOL

PARAMETER

2N5490/5494

V

CBO

Collector-base voltage

2N5492

2N5496

2N5490/5494

V

CEO

Collector-emitter voltage

2N5492

2N5496

V

EBO

I

C

I

B

P

T

T

j

T

stg

Emitter-base voltage

Collector current

Base current

Total power dissipation

Junction temperature

Storage temperature

T

C

=25℃

Open collector

Open base

Open emitter

CONDITIONS

VALUE

60

75

90

40

55

70

5

7

3

50

150

-65~150

V

A

A

W

℃

℃

V

V

UNIT

THERMAL CHARACTERISTICS

SYMBOL

R

th j-c

PARAMETER

Thermal resistance from junction to case

MAX

2.5

UNIT

℃/W

JMnic

Product Specification

www.jmnic.com

Silicon NPN Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

2N5490/5494

V

CEO(SUS)

Collector-emitter

sustioning voltage

2N5492

2N5496

2N5490

Collector-emitter

saturation voltage

2N5492

2N5494

2N5496

2N5490

2N5492

V

BE

Base-emitter on voltage

2N5494

2N5496

2N5492

I

CEV

Collector cut-off current

2N5490/5494

2N5496

I

CER

I

EBO

Collector cut-off current

Emitter cut-off current

2N5490

2N5492

h

FE

DC current gain

2N5494

2N5496

f

T

Transition frequency

2N5490 2N5492 2N5494 2N5496

CONDITIONS

MIN

40

TYP.

MAX

UNIT

I

C

=0.1A ;I

B

=0

55

70

V

I

C

=2.0A;I

B

=0.2A

I

C

=2.5A;I

B

=0.25A

1.0

I

C

=3.0A;I

B

=0.3A

I

C

=3.5A;I

B

=0.35A

I

C

=2.0A ; V

CE

=4V

I

C

=2.5A ; V

CE

=4V

I

C

=3.0A ; V

CE

=4V

I

C

=3.5A ; V

CE

=4V

V

CE

=70V;V

BE

=1.5V

V

CE

=55V;V

BE

=1.5V

V

CE

=85V;V

BE

=1.5V

V

CE

=Rated V

CEO

;R

BE

=100Ω

V

EB

=5V; I

C

=0

I

C

=2.0A ; V

CE

=4V

I

C

=2.5A ; V

CE

=4V

20

I

C

=3.0A ; V

CE

=4V

I

C

=3.5A ; V

CE

=4V

I

C

=0.5A ; V

CE

=4V

0.8

MHz

100

0.5

1.0

mA

mA

1.0

mA

1.1

1.3

V

1.5

1.7

V

V

CEsat

JMnic

Product Specification

www.jmnic.com

Silicon NPN Power Transistors

PACKAGE OUTLINE

2N5490 2N5492 2N5494 2N5496

Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)

JMnic

参数对比

与2N5490相近的元器件有：2N5492、2N5494、2N5496、2N5490_15。描述及对比如下：

型号	2N5490	2N5492	2N5494	2N5496	2N5490_15
描述	POWER TRANSISTOR	POWER TRANSISTOR	POWER TRANSISTOR	POWER TRANSISTOR	POWER TRANSISTOR
状态	Active	Active	Active	Active	Active

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