Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
DESCRIPTION
・With
TO-66 package
・Excellent
safe operating area
・Low
collector saturation voltage
APPLICATIONS
・For
high frequency power amplifier ;
audio power amplifier and drivers.
PINNING(see Fig.2)
PIN
1
2
3
Base
Emitter
Collector
DESCRIPTION
2N5597 2N5599 2N5601 2N5603
Fig.1 simplified outline (TO-66) and symbol
Absolute maximum ratings(Ta=
℃)
SYMBOL
V
CBO
固电
导½
半
PARAMETER
CONDITIONS
2N5597
2N5599/5601
2N5603
Collector-base voltage
V
CEO
Collector-emitter voltage
INC
AN
H
2N5597
MIC
SE
G
Open base
Open emitter
TOR
UC
ND
O
VALUE
-80
-100
-120
-60
-80
-100
UNIT
V
2N5599/5601
2N5603
V
V
EBO
I
C
P
D
T
j
T
stg
Emitter-base voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature
Open collector
-5
-2
V
A
W
℃
℃
T
C
=25℃
20
150
-65~150
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal resistance junction to case
VALUE
4.37
UNIT
℃/W
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
2N5597
V
CEO(SUS)
Collector-emitter
sustaining voltage
2N5599/5601
2N5603
V
CEsat
V
BE
I
CBO
I
CEO
I
EBO
Collector-emitter saturation voltage
Base-emitter on voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
2N5597 2N5599 2N5601 2N5603
CONDITIONS
MIN
-60
TYP.
MAX
UNIT
I
C
=-50mA ;I
B
=0
-80
-100
V
I
C
=-1A; I
B
=-0.1A
I
C
=-1A ; V
CE
=-5V
V
CB
=Rated V
CBO
; I
E
=0
V
CE
= Rated V
CEO
,I
B
=0
V
EB
=-5V; I
C
=0
70
-1.0
-1.5
-0.1
-1.0
-0.1
V
V
mA
mA
mA
h
FE
固电
DC current gain
导½
半
2N5597/5601
I
C
=-1A ; V
CE
=-5V
2N5599/5603
2N5597/5601
f
T
Transition frequency
AN
CH
IN
2N5599/5603
MIC
SE
G
TOR
UC
ND
O
200
90
30
60
MHz
50
I
C
=-0.5A ; V
CE
=-10V
2
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2N5597 2N5599 2N5601 2N5603
固电
导½
半
MIC
SE
G
Fig.2 outline dimensions
AN
CH
IN
TOR
UC
ND
O
3
