Product Specification
www.jmnic.com
Silicon NPN Power Transistors
DESCRIPTION
・With
TO-3 package
・Complement
to type 2N5883 2N5884
APPLICATIONS
・They
are intended for use in power linear
and switching applications
PINNING
PIN
1
2
3
Base
Emitter
Collector
DESCRIPTION
2N5885 2N5886
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=
℃)
SYMBOL
V
CBO
PARAMETER
2N5885
Collector-base voltage
2N5886
V
CEO
V
EBO
I
C
I
CM
I
B
P
D
T
j
T
stg
Collector-emitter
voltage
Emitter-base voltage
Collector current
Collector current-peak
Base current
Total Power Dissipation
Junction temperature
Storage temperature
T
C
=25℃
2N5885
Open base
2N5886
Open collector
80
5
25
50
7.5
200
200
-65~200
V
A
A
A
W
℃
℃
Open emitter
80
60
V
CONDITIONS
VALUE
60
V
UNIT
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal resistance junction to case
VALUE
0.875
UNIT
℃/W
JMnic
Product Specification
www.jmnic.com
Silicon NPN Power Transistors
2N5885 2N5886
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
CEO(sus)
PARAMETER
Collector-emitter
sustaining voltage
2N5885
I
C
=0.2A ;I
B
=0
2N5886
I
C
=15A; I
B
=1.5A
I
C
=25A; I
B
=6.25A
I
C
=25A; I
B
=6.25A
I
C
=10A ; V
CE
=4V
V
CB
=ratedV
CBO
; I
B
=0
2N5885
I
CEO
Collector cut-off current
2N5886
Collector cut-off current
(V
BE(off)
=1.5V)
Emitter cut-off current
DC current gain
DC current gain
DC current gain
Trainsistion frequency
V
CE
=40V; I
B
=0
V
CE
=ratedV
CEO
;
V
CE
=ratedV
CEO
; T
C
=150℃
V
EB
=5V; I
C
=0
I
C
=3A ; V
CE
=4V
I
C
=10A ; V
CE
=4V
I
C
=25A ; V
CE
=4V
I
C
=1A ; V
CE
=10V;f=1MHz
35
20
4
4
MHz
100
1
10
1
mA
mA
mA
V
CE
=30V; I
B
=0
2
mA
80
1
4
2.5
1.5
1
V
V
V
V
mA
CONDITIONS
MIN
60
V
TYP.
MAX
UNIT
V
CEsat-1
V
CEsat-2
V
BEsat
V
BE
I
CBO
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Base-emitter on voltage
Collector cut-off current
I
CEV
I
EBO
h
FE-1
h
FE-2
h
FE-3
f
T
Switching times
t
r
t
s
t
f
Rise time
Storage time
Fall time
I
C
=10A ;I
B1
=- I
B2
=1A
V
CC
=30V
0.7
1.0
0.8
μs
μs
μs
JMnic
Product Specification
www.jmnic.com
Silicon NPN Power Transistors
PACKAGE OUTLINE
2N5885 2N5886
Fig.2 outline dimensions (unindicated tolerance:±0.10mm)
JMnic
