UNISONIC TECHNOLOGIES CO., LTD
2N60
2 Amps, 600/650 Volts
N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC
2N60
is a high voltage MOSFET and is designed to
have better characteristics, such as fast switching time, low gate
charge, low on-state resistance and have a high rugged avalanche
characteristics. This power MOSFET is usually used at high speed
switching applications in power supplies, PWM motor controls, high
efficient DC to DC converters and bridge circuits.
1
1
Power MOSFET
1
TO-220
1
TO-220F
TO-220F1
TO-262
FEATURES
* R
DS(ON)
= 5Ω@V
GS
= 10V
* Ultra Low gate charge (typical 9.0nC)
* Low reverse transfer capacitance (C
RSS
= typical 5.0 pF)
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
1
TO-251
1
TO-252
1
1
TO-126
TO-251L
SYMBOL
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
2N60L-x-TA3-T
2N60G-x-TA3-T
2N60L-x-TF1-T
2N60G-x-TF1-T
2N60L-x-TF3-T
2N60G-x-TF3-T
2N60L-x-TM3-T
2N60G-x-TM3-T
2N60L-x-TMA-T
2N60G-x-TMA-T
2N60L-x-TN3-R
2N60G-x-TN3-R
2N60L-x-T2Q-T
2N60G-x-T2Q-T
2N60L-x-T60-K
2N60G-x-T60-K
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
TO-220
TO-220F1
TO-220F
TO-251
TO-251L
TO-252
TO-262
TO-126
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
Packing
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1 of 6
QW-R502-053,Ma
2N60
ABSOLUTE MAXIMUM RATINGS
(
T
C
= 25°С, unless otherwise specified)
PARAMETER
SYMBOL
Power MOSFET
RATINGS
UNIT
2N60-A
600
V
Drain-Source Voltage
V
DSS
2N60-B
650
V
Gate-Source Voltage
V
GSS
±30
V
Avalanche Current (Note 2)
I
AR
2.0
A
Continuous
I
D
2.0
A
Drain Current
8.0
A
Pulsed (Note 2)
I
DM
Single Pulsed (Note 3)
E
AS
140
mJ
Avalanche Energy
Repetitive (Note 2)
E
AR
4.5
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
V/ns
TO-220
54
W
TO-220F/TO-220F1
23
W
P
D
Power Dissipation
TO-251/TO-251L/TO-252
(T
= 25°С)
44
W
C
TO-262
54
W
40
W
TO-126
Junction Temperature
T
J
+150
°С
Ambient Operating Temperature
T
OPR
-55 ~ +150
°С
Storage Temperature
T
STG
-55 ~ +150
°С
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by T
J
3. L=64mH, I
AS
=2.0A, V
DD
=50V, R
G
=25
Ω,
Starting T
J
= 25°C
4. I
SD
≤2.4A,
di/dt≤200A/μs, V
DD
≤
BV
DSS
, Starting T
J
= 25°C
THERMAL DATA
PARAMETER
PACKAGE
SYMBOL
TO-220
TO-220F/TO-220F1
Junction to Ambient TO-251/TO-251L/TO-252
TO-262
TO-126
TO-220
TO-220F/TO-220F1
Junction to Case
TO-251/TO-251L/TO-252
TO-262
TO-126
RATINGS
62.5
62.5
100
62.5
89
2.32
5.5
2.87
2.32
3.12
UNIT
°С/W
°С/W
°С/W
°С/W
°С/W
°С/W
°С/W
°С/W
°С/W
°С/W
θ
JA
θ
Jc
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2 of 6
QW-R502-053,Ma
2N60
ELECTRICAL CHARACTERISTICS
(T
J
=25°С, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
Forward
Reverse
2N60-A
2N60-B
SYMBOL
BV
DSS
I
DSS
TEST CONDITIONS
V
GS
= 0V, I
D
= 250μA
Power MOSFET
MIN TYP MAX UNIT
600
650
10
100
-100
0.4
2.0
3.8
270
40
5
10
25
20
25
9.0
1.6
4.3
4.0
5
350
50
7
30
60
50
60
11
V
V
μA
nA
nA
V/°С
V
Ω
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
A
A
ns
μC
Breakdown Voltage Temperature Coefficient
V
DS
= 600V, V
GS
= 0V
V
GS
= 30V, V
DS
= 0V
I
GSS
V
GS
= -30V, V
DS
= 0V
I
D
= 250
μA,
Referenced to
△BV
DSS
/
△
T
J
25°C
V
DS
= V
GS
, I
D
= 250μA
V
GS
= 10V, I
D
=1A
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
Static Drain-Source On-State Resistance
R
DS(ON)
DYNAMIC CHARACTERISTICS
Input Capacitance
C
ISS
Output Capacitance
C
OSS
Reverse Transfer Capacitance
C
RSS
SWITCHING CHARACTERISTICS
Turn-On Delay Time
t
D (ON)
Turn-On Rise Time
t
R
Turn-Off Delay Time
t
D(OFF)
Turn-Off Fall Time
t
F
Total Gate Charge
Q
G
Gate-Source Charge
Q
GS
Gate-Drain Charge
Q
GD
DRAIN-SOURCE DIODE CHARACTERISTICS
Drain-Source Diode Forward Voltage
V
SD
Continuous Drain-Source Current
I
SD
Pulsed Drain-Source Current
I
SM
Reverse Recovery Time
t
RR
Reverse Recovery Charge
Q
RR
Notes: 1. Pulse Test: Pulse width
≤
300μs, Duty cycle≤2%
2. Essentially independent of operating temperature
V
DS
=25V, V
GS
=0V,f =1MHz
V
DD
=300V, I
D
=2.4A,
R
G
=25Ω
(Note 1, 2)
V
DS
=480V, V
GS
=10V,
I
D
=2.4A
(Note 1, 2)
V
GS
= 0 V, I
SD
= 2.0 A
1.4
2.0
8.0
180
0.72
V
GS
= 0 V, I
SD
= 2.4A,
di/dt = 100 A/μs (Note1)
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3 of 6
QW-R502-053,Ma
2N60
TEST CIRCUITS AND WAVEFORMS
D.U.T.
+
V
DS
-
+
-
L
Power MOSFET
R
G
Driver
V
GS
Same Type
as D.U.T.
* dv/dt controlled by R
G
* I
SD
controlled by pulse period
* D.U.T.-Device Under Test
V
DD
Fig. 1A Peak Diode Recovery dv/dt Test Circuit
V
GS
(Driver)
Period
P.W.
D=
P. W.
Period
V
GS
= 10V
I
FM
, Body Diode Forward Current
I
SD
(D.U.T.)
I
RM
Body Diode Reverse Current
di/dt
Body Diode Recovery dv/dt
V
DS
(D.U.T.)
V
DD
Body Diode
Forward Voltage Drop
Fig. 1B Peak Diode Recovery dv/dt Waveforms
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QW-R502-053,Ma
2N60
TEST CIRCUITS AND WAVEFORMS (Cont.)
Power MOSFET
V
DS
90%
V
GS
10%
t
D(ON)
t
R
t
D(OFF)
t
F
Fig. 2A Switching Test Circuit
Fig. 2B Switching Waveforms
V
GS
Q
G
10V
Q
GS
Q
GD
Charge
Fig. 3A Gate Charge Test Circuit
Fig. 3B Gate Charge Waveform
BV
DSS
I
AS
I
D(t)
V
DD
V
DS(t)
t
p
Time
Fig. 4A Unclamped Inductive Switching Test Circuit
Fig. 4B Unclamped Inductive Switching Waveforms
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QW-R502-053,Ma
