Product Specification
www.jmnic.com
Silicon PNP Power Transistors
DESCRIPTION
・With
TO-220 package
・High
power dissipation
・Complement
to NPN type :
2N6129 2N6130 2N6131
APPLICATIONS
・Power
amplifier and medium speed
switching applications
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
2N6132 2N6133 2N6134
Absolute maximum ratings(Ta=25
℃)
SYMBOL
PARAMETER
2N6132
V
CBO
Collector-base voltage
2N6133
2N6134
2N6132
V
CEO
Collector-emitter voltage
2N6133
2N6134
V
EBO
I
C
I
B
P
T
T
j
T
stg
Emitter-base voltage
Collector current
Base current
Total power dissipation
Junction temperature
Storage temperature
T
C
=25℃
Open collector
Open base
Open emitter
CONDITIONS
VALUE
40
60
80
40
60
80
5
7
3
50
150
-65~150
V
A
A
W
℃
℃
V
V
UNIT
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal resistance from junction to case
MAX
2.5
UNIT
℃/W
JMnic
Product Specification
www.jmnic.com
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
2N6132
V
CEO(SUS)
Collector-emitter
sustioning voltage
2N6133
2N6134
2N6132
V
CEsat
Collector-emitter
saturation voltage
I
C
=0.1A ;I
B
=0
2N6132 2N6133 2N6134
CONDITIONS
MIN
40
60
80
TYP.
MAX
UNIT
V
1.4
2N6133
2N6134
I
C
=7A;I
B
=1.2A
1.8
I
C
=2.5A ; V
CE
=4V
2N6132
V
CE
=40V;V
BE
=1.5V
T
C
=150℃
V
CE
=60V;V
BE
=1.5V
T
C
=150℃
V
CE
=80V; V
BE
=1.5V
T
C
=150℃
V
EB
=5V; I
C
=0
I
C
=2.5A ; V
CE
=4V
I
C
=0.2A ; V
CE
=4V
20
2.5
1.4
0.5
3.0
0.5
3.0
0.5
3.0
1.0
100
MHz
V
V
V
BE
Base-emitter on voltage
mA
I
CEV
Collector cut-off current
2N6133
2N6134
mA
mA
I
EBO
h
FE
f
T
Emitter cut-off current
DC current gain
Transition frequency
JMnic
Product Specification
www.jmnic.com
Silicon PNP Power Transistors
PACKAGE OUTLINE
2N6132 2N6133 2N6134
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
JMnic
