Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2N6229 2N6230 2N6231
DESCRIPTION
・With
TO-3 package
・Low
collector saturation voltage
・Excellent
safe operating area
APPLICATIONS
・For
high power audio; disk head
positioners and other linear applications
.
PINNING
PIN
1
2
3
Base
Emitter
Collector
Fig.1 simplified outline (TO-3) and symbol
DESCRIPTION
Absolute maximum ratings(Ta=
℃)
SYMBOL
固电
导½
半
PARAMETER
2N6229
2N6230
2N6231
2N6229
2N6230
2N6231
CONDITIONS
V
CBO
Collector-base voltage
V
CEO
Collector-emitter voltage
GS
AN
CH
IN
Open emitter
MIC
E
TOR
UC
ND
O
VALUE
-100
-120
-140
-100
-120
-140
UNIT
V
Open base
V
V
EBO
I
C
P
D
T
j
T
stg
Emitter-base voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature
Open collector
-7
-10
V
A
W
℃
℃
T
C
=25℃
150
150
-65~200
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal resistance junction to case
VALUE
0.875
UNIT
℃/W
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
2N6229 2N6230 2N6231
CONDITIONS
MIN
TYP.
MAX
UNIT
2N6229
Collector-emitter
sustaining voltage
-100
V
CEO(SUS)
2N6230
I
C
=-0.2A ;I
B
=0
-120
V
2N6231
-140
V
CEsat
Collector-emitter saturation voltage
I
C
=-4A; I
B
=-0.4A
-1.0
V
V
BE
Base-emitter on voltage
I
C
=-5A ; V
CE
=-2V
-2.0
V
I
CEO
Collector cut-off current
V
CE
=Rated V
CEO
; I
B
=0
-5.0
mA
I
CBO
Collector cut-off current
I
EBO
固电
Emitter cut-off current
导½
半
2N6229
2N6230
2N6231
V
CB
=Rated V
CBO
; I
E
=0
-1.0
mA
V
EB
=-7V; I
C
=0
h
FE
DC current gain
f
T
Transition frequency
AN
CH
IN
MIC
SE
G
I
C
=-5A ; V
CE
=-2V
I
C
=-0.5A ; V
CE
=-4V
TOR
UC
ND
O
-0.1
25
100
20
80
15
60
1
mA
MHz
2
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2N6229 2N6230 2N6231
固电
导½
半
MIC
SE
G
AN
CH
IN
TOR
UC
ND
O
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
