Product Specification
www.jmnic.com
Silicon PNP Power Transistors
2N6296 2N6297
DESCRIPTION
・With
TO-66 package
・DARLINGTON
・Complement
to type 2N6294/6295
APPLICATIONS
・For
high gain amplifier and medium
speed switching applications
PINNING (See Fig.2)
PIN
1
2
3
Base
Emitter
Collector
Fig.1 simplified outline (TO-66) and symbol
DESCRIPTION
Absolute maximum ratings(Ta=25
℃)
SYMBOL
V
CBO
PARAMETER
2N6296
Collector-base voltage
2N6297
2N6296
V
CEO
V
EBO
I
C
I
CM
I
B
P
T
T
j
T
stg
Collector-emitter voltage
2N6298
Emitter-base voltage
Collector current
Collector current-Peak
Base current
Total power dissipation
Junction temperature
Storage temperature
T
C
=25℃
Open collector
Open base
80
5
4
8
80
50
150
-65~200
V
A
A
mA
W
℃
℃
Open emitter
80
60
V
CONDITIONS
VALUE
60
V
UNIT
THERMAL CHARACTERISTICS
SYMBOL
R
th j-C
PARAMETER
Thermal resistance from junction to case
MAX
3.5
UNIT
℃/W
JMnic
Product Specification
www.jmnic.com
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
2N6296
I
C
=50mA ; I
B
=0
2N6297
I
C
=2A ;I
B
=8mA
I
C
=4A ;I
B
=40mA
I
C
=4A ;I
B
=40mA
I
C
=2A ; V
CE
=3V
V
CE
=RatedV
CE
;V
BE(off)
=1.5V
T
C
=150℃
V
CE
=1/2Rated V
CEO
; I
B
=0
V
EB
=5V; I
C
=0
I
C
=2A ; V
CE
=3V
I
C
=4A ; V
CE
=3V
I
C
=1.5A ; V
CE
=3V;f=1.0MHz
I
E
=0 ; V
CB
=10V;f=0.1MHz
CONDITIONS
2N6296 2N6297
MIN
60
TYP.
MAX
UNIT
V
(BR)CEO
Collector-emitter
breakdown voltage
V
80
2.0
3.0
4.0
2.8
0.5
5.0
0.5
2.0
750
100
4.0
200
MHz
pF
18000
V
V
V
V
mA
mA
mA
V
CEsat-1
V
CEsat-2
V
BEsat
V
BE
I
CEX
I
CEO
I
EBO
h
FE-1
h
FE-2
f
T
C
OB
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base -emitter on voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
Transition frequency
Output capacitance
JMnic
Product Specification
www.jmnic.com
Silicon PNP Power Transistors
PACKAGE OUTLINE
2N6296 2N6297
Fig.2 Outline dimensions
JMnic
