2N6659
MECHANICAL DATA
Dimensions in mm (inches)
8.89 (0.35)
9.40 (0.37)
7.75 (0.305)
8.51 (0.335)
N–CHANNEL
ENHANCEMENT MODE
MOS TRANSISTOR
FEATURES
• Switching Regulators
• Converters
4.19 (0.165)
4.95 (0.195)
12.70
(0.500)
min.
0.89 max.
(0.035)
7.75 (0.305)
8.51 (0.335)
dia.
5.08 (0.200)
typ.
• Motor Drivers
2.54
(0.100)
2
1
0.66 (0.026)
1.14 (0.045)
0.71 (0.028)
0.86 (0.034)
3
45˚
TO–39 METAL PACKAGE
Underside View
PIN 1 – Source
PIN 3 – Drain
PIN 2 – Gate
CASE – Drain
ABSOLUTE MAXIMUM RATINGS
(T
CASE
= 25°C unless otherwise stated)
V
DS
V
GS
I
D
I
D
I
DM
P
D
P
D
T
j
T
stg
T
L
Drain – Source Voltage
Gate – Source Voltage
Drain Current
Drain Current
Pulsed Drain Current *
Power Dissipation
Power Dissipation
Storage Temperature Range
Lead Temperature (
1
/
16
” from case for 10 sec.)
@ T
CASE
= 25°C
@ T
CASE
= 100°C
@ T
CASE
= 25°C
@ T
CASE
= 100°C
35V
±20V
1.4A
1A
3A
6.25W
2.5W
–55 to 150°C
–55 to 150°C
300°C
Operating Junction Temperature Range
* Pulse width limited by maximum junction temperature.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Prelim. 4/00
2N6659
ELECTRICAL CHARACTERISTICS
(T
CASE
= 25°C unless otherwise stated)
Parameter
STATIC CHARACTERISTICS
V
(BR)DSS
Gate – Source Breakdown Voltage
V
GS(th)
I
GSS
Gate Threshold Voltage
Gate – Body Leakage Current
V
GS
= 0V
V
DS
= V
GS
V
GS
= ±15V
V
DS
= 0V
V
DS
= 90V
I
DSS
I
D(on)*
Zero Gate Voltage Drain Current
On–State Drain Current
V
DS
= 72V
V
DS
= 15V
V
GS
= 5V
R
DS(on)*
Drain – Source On Resistance
V
GS
= 10V
I
D
= 1A
V
GS
= 5V
V
DS(on)*
g
FS*
g
OS*
Drain – Source On Voltage
Forward Transconductance
Common Source Output Conductance
DYNAMIC CHARACTERISTICS
R
DS(on)
C
ds
C
iss
C
oss
C
rss
t
ON
t
OFF
Small Signal Drain – Source
On Resistance
Drain – Source Capacitance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn–On Time
Turn–Off Time
R
L
= 23
W
I
D
= 1A
V
DD
= 25V
R
G
= 25
W
V
GEN
= 10V
8
9
10
ns
10
V
GS
= 10V
f = 1kHz
V
DS
= 24V
V
GS
= 0V
f = 1MHz
I
D
= 1A
1.3
30
35
28
2
1.8
40
50
40
10
pF
V
GS
= 10V
I
D
= 1A
V
DS
= 10V
V
DS
= 10V
T
CASE
= 125°C
I
D
= 0.5A
I
D
= 0.1A
170
T
CASE
= 125°C
I
D
= 0.3A
T
CASE
= 125°C
V
GS
= 0V
V
GS
= 0V
T
CASE
= 125°C
V
GS
= 10V
I
D
= 0.3A
1.5
1.8
1.8
1.3
2.6
0.54
1.3
2.6
350
1100
5
1.8
3.6
1.5
1.8
3.6
ms
V
Test Conditions
I
D
= 10
m
A
I
D
= 1mA
Min.
35
0.8
Typ.
70
1.6
Max.
Unit
V
nA
2
±100
±500
10
500
m
A
A
W
m
s
W
* Pulse Test: t
p
£
80
m
s ,
d £
1%
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Prelim. 4/00
