This enhancement-mode (normally-off) vertical DMOS FET is
ideally suited to a wide range of switching and amplifying
applications where high breakdown voltage, high input
impedance, low input capacitance, and fast switching speeds
are desired.
Hi-Reliability Military and Space screening options available
CASE
ABSOLUTE MAXIMUM RATINGS
T
V
DS
I
D
I
DM
V
GS
P
tot(1)
P
tot(2)
T
j
,T
stg
Drain - Source Voltage
Drain Current
Drain Current
= 25°C unless otherwise stated
60V
1.0A
3A
±20V
3.0W
0.020W/°C
0.5W
-55 to +175°C
- Continuous (T
C
= 25°C)
- Pulsed
(Note 1)
Gate - Source Voltage
Total Power Dissipation at T
mounting base
≤
25°C
De-rate Linearly above 25°C
Total Power Dissipation at T
ambient
≤
25°C
Operating and Storage Junction Temperature Range
THERMAL DATA
R
thj-mb
NOTES:
Thermal Resistance Junction – Mounting base
Max
50
°C/W
1) Repetitive Rating: Pulse Width limited by maximum junction temperature.
2) Pulse Test: Pulse Width
≤
300µS, Duty Cycle ,
δ
2%
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be
both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab
encourages customers to verify that datasheets are current before placing orders.
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be
both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab
encourages customers to verify that datasheets are current before placing orders.
