UNISONIC TECHNOLOGIES CO., LTD
2N6718
NPN GENERAL PLANAR
TRANSISTOR
DESCRIPTION
The UTC
2N6718
is designed for general purpose medium
power amplifier and switching applications.
NPN SILICON TRANSISTOR
FEATURES
* High Power: 850mW
* High Current: 1A
*Pb-free plating product number: 2N6718L
*Pb-free plating product number: 2N6718G
ORDERING INFORMATION
Normal
2N6718-x-AB3-R
2N6718-x-T6C-K
2N6718-x-T92-B
2N6718-x-T92-K
Ordering Number
Lead Free Plating
2N6718L-x-AB3-R
2N6718L-x-T6C-K
2N6718L-x-T92-B
2N6718L-x-T92-K
Halogen Free
2N6718G-x-AB3-R
2N6718G-x-T6C-K
2N6718G-x-T92-B
2N6718G-x-T92-K
Package
SOT-89
TO-126C
TO-92
TO-92
Pin Assignment
1
2
3
B
C
E
E
C
B
E
C
B
E
C
B
Packing
Tape Reel
Bulk
Tape Box
Bulk
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2N6718
PARAMETER
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
C
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING
(Ta=25℃, unless otherwise specified)
RATINGS
UNIT
Collector-Base Voltage
100
V
Collector-Emitter Voltage
100
V
Emitter-Base Voltage
5
V
Collector Current (Continue)
1
A
Collector Current (Pulse)
2
A
SOT-89
0.5
W
Total Power Dissipation
P
D
TO-126C
1.6
W
TO-92
850
mW
℃
Junction Temperature
T
J
+150
℃
Storage Temperature
T
STG
-55 ~ +150
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS
(Ta=25℃, unless otherwise specified)
PARAMETER
SYMBOL TEST CONDITIONS
Collector-Base Breakdown Voltage
BV
CBO
I
C
=100uA
Collector-Emitter Breakdown Voltage (note)
BV
CEO
I
C
=1mA
Emitter-Base Breakdown Voltage
BV
EBO
I
E
=10μA
Collector-Emitter Saturation Voltage
V
CE(SAT)
I
C
=350mA, I
B
=35mA
Collector Cut-Off Current
I
CBO
V
CB
=80V
h
FE1
V
CE
=1V, I
C
=50mA
DC Current Gain
h
FE2
V
CE
=1V, I
C
=250mA
h
FE3
V
CE
=1V, I
C
=500mA
V
CE
=10V, I
C
=50mA,
Current Gain - Bandwidth Product
f
T
f=100MHz
Output Capacitance
Cob
V
CB
=10V, I
E
=0, f=1MHz
Note: Pulse test: PulseWidth≤380μs, Duty Cycle≤2%
MIN
100
100
5
TYP
MAX
UNIT
V
V
V
mV
nA
350
100
80
50
20
50
20
300
MHz
pF
CLASSIFICATION OF h
FE2
RANK
RANGE
A
50~115
B
95~300
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2N6718
TYPICAL CHARACTERISTICS
NPN SILICON TRANSISTOR
Saturation Voltage
vs. Collector Current
10000
Saturation Voltage (mV)
Capacitance (pF)
100
Saturation Voltage (mV)
Current Gain, h
FE
Collector Output Capacitance
1000
V
BE(SAT)
@Ic=10I
B
10
Cob
100
1
10
100
1000
10000
Collector Current, Ic (mA)
Safe Operating Area
10
1ms
1
100ms
0.1
1s
Cutoff Frequency (MHz)
Collector Current, Ic(A)
1
0.1
1
10
100
Collector Base Voltage (V)
Cutoff Frequency
vs. Collector Current
1000
f
T
@V
CE
=10V
0.01
1
10
Forward Voltage, V
CE
(V)
100
100
1
10
Collector Current, Ic(mA)
100
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2N6718
TYPICAL CHARACTERISTICS
NPN SILICON TRANSISTOR
Power Derating
Power Dissipation, P
D
(mW)
2000
1500
1000
500
0
50
100
150
200
TO-126C
TO-92
SOT-89
0
Ambient Temperature, Ta(℃)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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