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2N7002
NCE N-Channel
Enhancement Mode Power MOSFET
GENERAL FEATURES
●
V
DS
= 60V,I
D
= 0.115A
R
DS(ON)
< 3Ω @ V
GS
=4.5V
R
DS(ON)
< 2Ω @ V
GS
=10V
Schematic diagram
●
Lead free product is acquired
●
Surface Mount Package
Application
●Direct
Logic-Level Interface: TTL/CMOS
●Drivers:
Relays, Solenoids, Lamps, Hammers,Display,
Memories, Transistors, etc.
●Battery
Operated Systems
●Solid-State
Relays
Marking and pin Assignment
SOT-23 top view
Package Marking And Ordering Information
Device Marking
7002
Device
2N7002
Device Package
SOT-23
Reel Size
Ø180mm
Tape width
8 mm
Quantity
3000 units
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
V
DS
Gate-Source Voltage
V
GS
I
D
Drain Current-Continuous@ Current-Pulsed (Note 1)
I
DM
Maximum Power Dissipation
P
D
Operating Junction and Storage Temperature Range
T
J
,T
STG
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (Note 2)
R
θJA
Limit
60
±20
0.115
0.8
0.2
-55 To 150
Unit
V
V
A
A
W
℃
625
℃
/W
Electrical Characteristics (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
BV
DSS
I
DSS
V
GS
=0V I
D
=250μA
V
DS
=60V,V
GS
=0V
Min
60
Typ
Max
Unit
V
1
μA
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Gate-Body Leakage Current
On Characteristics (Note 3)
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
Dynamic Characteristics (Note4)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics (Note 4)
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
Diode Forward Current (Note 2)
V
SD
I
S
V
GS
=0V,I
S
=0.115A
t
d(on)
t
r
t
d(off)
t
f
Q
g
V
DS
=10V,I
D
=0.115A,
V
GS
=4.5V
V
DD
=30V,I
D
=0.2A
V
GS
=10V,R
GEN
=10Ω
C
lss
C
oss
C
rss
V
DS
=30V,V
GS
=0V,
F=1.0MHz
V
GS(th)
R
DS(ON)
g
FS
V
DS
=V
GS
,I
D
=250μA
V
GS
=5V, I
D
=0.05A
V
GS
=10V, I
D
=0.5A
V
DS
=10V,I
D
=0.2A
0.08
1
I
GSS
V
GS
=±20V,V
DS
=0V
2N7002
±100
2
3
2
nA
V
Ω
Ω
S
20
10
3.6
10
50
17
10
1.7
3
50
20
5
PF
PF
PF
nS
nS
nS
nS
nC
1.2
0.115
V
A
Notes:
1.
Repetitive Rating: Pulse width limited by maximum junction temperature.
2.
Surface Mounted on FR4 Board, t
≤
10 sec.
3.
Pulse Test: Pulse Width
≤
300μs, Duty Cycle
≤
2%.
4.
Guaranteed by design, not subject to production
Wuxi NCE Power Semiconductor Co., Ltd
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Pb Free Product
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TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
Vdd
Rl
D
G
S
Vout
t
d(on)
t
on
t
r
90%
2N7002
t
off
t
f
90%
t
d(off)
Vin
Vgs
Rgen
V
OUT
10%
INVERTED
10%
90%
V
IN
10%
50%
50%
PULSE WIDTH
Figure 1:Switching Test Circuit
Figure 2:Switching Waveforms
I
D
- Drain Current (A)
Vds Drain-Source Voltage (V)
I
D
- Drain Current (A)
Vgs Gate-Source Voltage (V)
Figure 3 Output CHARACTERISTICS
Figure 4 Transfer Characteristics
Rdson On-Resistance(Ω)
Rdson On-Resistance(Ω)
I
D
- Drain Current (A)
Vgs Gate-Source Voltage (V)
Figure 5 Drain-Source On-Resistance
Figure 6 Rdson vs Vgs
Wuxi NCE Power Semiconductor Co., Ltd
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2N7002
I
s
- Reverse Drain Current (mA)
Vgs Gate-Source Voltage (V)
Qg Gate Charge (nC)
Vsd Source-Drain Voltage (V)
Figure 7 Gate Charge
Figure 8 Source-DrainDiode Forward
Normalized On-Resistance
T
J
-Junction Temperature(℃)
I
D
- Drain Current (A)
Vds Drain-Source Voltage (V)
Figure 9 Drain-Source On-Resistance
Figure 10
Safe Operation Area
C Capacitance (pF)
Vds Drain-Source Voltage (V)
Figure 11 Capacitance vs Vds
Wuxi NCE Power Semiconductor Co., Ltd
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2N7002
r(t),Normalized Effective
Transient Thermal Impedance
Square Wave Pluse Duration(sec)
Figure 12 Normalized Maximum Transient Thermal Impedance
Wuxi NCE Power Semiconductor Co., Ltd
Page 5
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