UNISONIC TECHNOLOGIES CO., LTD
2N7002ZT
300mA, 60V DUAL N-CHANNEL
ENHANCEMENT MODE POWER
MOSFET
DESCRIPTION
The UTC
2N7002ZT
uses advanced technology to provide
excellent R
DS(ON)
, low gate charge and low gate voltages during
operation. This device is suitable for use as a load switch or in PWM
applications.
Power MOSFET
FEATURES
* Low Reverse Transfer Capacitance (C
RSS
= typical 3.0 pF)
* ESD Protected
* Fast Switching Capability
* Avalanche Energy Specified
* Improved dv/dt Capability, High Ruggedness
SYMBOL
3.Drain
2.Gate
1.Source
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
2N7002ZTL-AN3-R
2N7002ZTG-AN3-R
Package
SOT-523
Pin Assignment
1
2
3
S
G
D
Packing
Tape Reel
MARKING
www.unisonic.com.tw
Copyright © 2012 Unisonic Technologies Co., Ltd
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2N7002ZT
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C, unless otherwise specified.)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
SYMBOL
V
DSS
V
GSS
Power MOSFET
RATINGS
UNIT
60
V
±20
V
Continuous
300
Drain Current
I
D
mA
Pulse(Note 2)
800
200
mW
Power Dissipation
P
D
Derating above T
A
=25°C
1.6
mW/°C
Junction Temperature
T
J
+150
°C
Storage Temperature
T
STG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS
(T
A
=25°C, unless otherwise specified.)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-Resistance (Note)
SYMBOL
BV
DSS
I
DSS
I
GSS
V
GS(TH)
R
DS(ON)
TEST CONDITIONS
V
GS
=0V, I
D
=10µA
V
DS
=60V, V
GS
=0V
V
DS
=0V, V
GS
=±20V
V
DS
=10V, I
D
=1mA
V
GS
=10V, I
D
=0.3A, T
J
=125°C
V
GS
=5V, I
D
=0.05A
MIN
60
1.0
±10
1.0
1.85
2.5
13.5
7.5
50
25
5.0
20
30
1.5
0.8
300
TYP
MAX UNIT
V
µA
µA
V
Ω
pF
pF
pF
ns
ns
V
A
mA
DYNAMIC PARAMETERS
Input Capacitance
C
ISS
Output Capacitance
C
OSS
V
DS
=25V, V
GS
=0V, f=1.0MHz
Reverse Transfer Capacitance
C
RSS
SWITCHING PARAMETERS
Turn-ON Delay Time
t
D(ON)
I
D
=0.2 A, V
DD
=30V, V
GS
=10V,
R
L
=150Ω, R
G
=10Ω
Turn-OFF Delay Time
t
D(OFF)
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage
V
SD
V
GS
=0V, Is=300mA (Note )
Maximum Pulsed Drain-Source Diode
I
SM
Forward Current
Maximum Continuous Drain-Source Diode
Is
Forward Current
Note: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch. Minimum land pad size.
2. Pulse width≦300μs, Duty cycle≦1%
25
10
3.0
12
20
0.88
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-538.C
2N7002ZT
TEST CIRCUITS AND WAVEFORMS
Power MOSFET
Switching Test Circuit
Switching Waveforms
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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