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2N7008-G-P005

MOSFET N-Channel MOSFET

器件类别:半导体    分立半导体   

厂商名称:Microchip(微芯科技)

厂商官网:https://www.microchip.com

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器件参数
参数名称
属性值
Product Attribute
Attribute Value
制造商
Manufacturer
Microchip(微芯科技)
产品种类
Product Category
MOSFET
RoHS
Details
技术
Technology
Si
安装风格
Mounting Style
Through Hole
封装 / 箱体
Package / Case
TO-92-3
Number of Channels
1 Channel
Transistor Polarity
N-Channel
Vds - Drain-Source Breakdown Voltage
60 V
Id - Continuous Drain Current
230 mA
Rds On - Drain-Source Resistance
7.5 Ohms
Configuration
Single
系列
Packaging
Cut Tape
系列
Packaging
Reel
Transistor Type
1 N-Channel
工厂包装数量
Factory Pack Quantity
2000
单位重量
Unit Weight
0.016000 oz
文档预览
2N7008
N-Channel Enhancement-Mode
Vertical DMOS FETs
Features
Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Low C
ISS
and fast switching speeds
Excellent thermal stability
Integral source-drain diode
High input impedance and high gain
Complementary N- and P-Channel devices
General Description
The Supertex 2N7008 is an enhancement-mode (normally-
off) transistor that utilizes a vertical DMOS structure
and Supertex’s well-proven silicon-gate manufacturing
process. This combination produces a device with the
power handling capabilities of bipolar transistors, and the
high input impedance and positive temperature coefficient
inherent in MOS devices. Characteristic of all MOS
structures, this device is free from thermal runaway and
thermally-induced secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a
wide range of switching and amplifying applications where
very low threshold voltage, high breakdown voltage, high
input impedance, low input capacitance, and fast switching
speeds are desired.
Applications
Motor controls
Converters
Amplifiers
Switches
Power supply circuits
Drivers (relays, hammers, solenoids, lamps,
memories, displays, bipolar transistors, etc.)
Ordering Information
Device
2N7008-G
Package Option
TO-92
BV
DSS
/BV
DGS
(V)
R
DS(ON)
(max)
(Ω)
I
D(ON)
(min)
(mA)
60
7.5
500
-G indicates package is RoHS compliant (‘Green’)
Absolute Maximum Ratings
Parameter
Drain-to-source voltage
Drain-to-gate voltage
Gate-to-source voltage
Operating and storage temperature
Soldering temperature
*
Pin Configuration
Value
BV
DSS
BV
DGS
±30V
DRAIN
SOURCE
-55°C to +150°C
+300°C
GATE
TO-92
Absolute Maximum Ratings are those values beyond which damage to the device
may occur. Functional operation under these conditions is not implied. Continuous
operation of the device at the absolute rating level may affect device reliability. All
voltages are referenced to device ground.
*
Distance of 1.6mm from case for 10 seconds.
Product Marking
2N
7 0 0 8
YYWW
YY = Year Sealed
WW = Week Sealed
= “Green” Packaging
TO-92
1235 Bordeaux Drive, Sunnyvale, CA 94089
Tel: 408-222-8888
www.supertex.com
2N7008
Thermal Characteristics
Package
TO-92
(continuous)
(mA)
I
D
(pulsed)
(A)
I
D
Power Dissipation
@T
C
= 25
O
C
(W)
(
O
C/W)
θ
jc
(
O
C/W)
θ
ja
(mA)
I
DR
I
DRM
(A)
230
1.3
1.0
125
170
230
1.3
Note:
† I
D
(continuous) is limited by max rated T
j
.
Electrical Characteristics
(T = 25°C unless otherwise specified)
A
Sym
Parameter
Min
Typ
Max
Units
Conditions
BV
DSS
V
GS(th)
I
GSS
I
DSS
I
D(ON)
R
DS(ON)
G
FS
C
ISS
C
OSS
C
RSS
t
(ON)
t
(OFF)
V
SD
Drain-to-source breakdown voltage
Gate threshold voltage
Gate body leakage current
Zero gate voltage drain current
On-state drain current
Static drain-to-source
on-state resistance
Forward transconductance
Input capacitance
Common source output capacitance
Reverse transfer capacitance
Turn-on time
Turn-off time
Diode forward voltage drop
60
1.0
-
-
-
500
-
-
80
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
2.5
100
1.0
500
-
7.5
7.5
-
50
25
5.0
20
20
1.5
V
V
nA
µA
mA
Ω
mmho
pF
V
GS
= 0V, I
D
= -10µA
V
GS
= V
DS
, I
D
= 250µA
V
GS
= ±30V, V
DS
= 0V
V
GS
= 0V, V
DS
= 50V
V
GS
= 0V, V
DS
= 50V,
T
A
= 125
O
C
V
GS
= 10V, V
DS
≥ 2.0V
DS(ON)
V
GS
= 5.0V, I
D
= 50mA
V
GS
= 10V, I
D
= 500mA
V
DS
= 10V, I
D
= 200mA
V
GS
= 0V, V
DS
= 25V,
f = 1.0MHz
V
DD
= 30V, I
D
= 200mA,
R
GEN
= 25Ω
V
GS
= 0V, I
SD
= 150mA
ns
V
Notes:
1. All D.C. parameters 100% tested at 25
O
C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Switching Waveforms and Test Circuit
10V
V
DD
PULSE
GENERATOR
R
L
OUTPUT
90%
10%
t
(ON)
INPUT
0V
t
(OFF)
t
r
t
d(OFF)
t
F
10%
t
d(ON)
V
DD
R
GEN
10%
90%
D.U.T.
INPUT
OUTPUT
0V
90%
1235 Bordeaux Drive, Sunnyvale, CA 94089
Tel: 408-222-8888
www.supertex.com
2
2N7008
3-Lead TO-92 Package Outline (N3)
D
A
Seating Plane
1
2
3
L
e1
e
b
c
Front View
Side View
E1
E
1
2
3
Bottom View
Symbol
Dimensions
(inches)
MIN
NOM
MAX
A
.170
-
.210
b
.014
-
.022
c
.014
-
.022
D
.175
-
.205
E
.125
-
.165
E1
.080
-
.105
e
.095
-
.105
e1
.045
-
.055
L
.500
-
.610*
JEDEC Registration TO-92.
* This dimension is not specified in the original JEDEC drawing. The value listed is for reference only.
† This dimension is a non-JEDEC dimension.
Drawings not to scale.
Supertex Doc.#:
DSPD-3TO92N3, Version D080408.
(The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline
information go to
http://www.supertex.com/packaging.html.)
Supertex inc.
does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such applications unless it receives an
adequate “product liability indemnification insurance agreement.”
Supertex inc.
does not assume responsibility for use of devices described, and limits its liability to the
replacement of the devices determined defective due to workmanship. No responsibility is assumed for possible omissions and inaccuracies. Circuitry and specifications
are subject to change without notice. For the latest product specifications refer to the
Supertex inc.
website: http//www.supertex.com.
©2008
All rights reserved. Unauthorized use or reproduction is prohibited.
Doc.# DSFP-2N7008
B091008
1235 Bordeaux Drive, Sunnyvale, CA 94089
Tel: 408-222-8888
www.supertex.com
3
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参数对比
与2N7008-G-P005相近的元器件有:2N7008-G-P002、2N7008-G、2N7008-G P013。描述及对比如下:
型号 2N7008-G-P005 2N7008-G-P002 2N7008-G 2N7008-G P013
描述 MOSFET N-Channel MOSFET MOSFET N-Channel MOSFET MOSFET 60V 7.5Ohm MOSFET N-Channel MOSFET
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