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2NS9S6

HIGH POWER PLASTIC COMPLEMENTARY SILICON POWER TRANSISTORS

厂商名称:New Jersey Semiconductor

厂商官网:http://www.njsemi.com

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^mi-Conductor <Piodueti,
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
2N5986, 2N5987
2N5988
NPN
2N5989, 2N5991
HIGH POWER PLASTIC
COMPLEMENTARY SILICON POWER TRANSISTORS
... designed for use In general-purpose amplifier and switch
ing
circuits.
• Collector Base Voltage - VCBO = 60 Vdc - 2N6986. 2N5989
• 80 Vdc - 2N6987
- 100 Vdc
-
2N5988, 2N5991
• Collector-Emitter Voltage - VCEO - 40 Vdc - 2N5986, 2N5989
= eO Vdc - 2N5987
= 80 Vdc - 2N5988, 2N5991
• DC Current Gain -
hr-E = 20-120 9>lc-6-0 Adc
= 7.0 (Mini <s> Ic " 12
Me
• Collector-Emitter Saturation Voltage -
)
=
12 AMPERE
TOWER TRANSISTORS
COMPLEMENTARY SILICON
40, 60, 80 VOLTS
100 WATTS
°-
7 Vdc (Ma
*>
@
'C • 6.0 Adc
•MAXIMUM RATINGS
Bating
Collector-BaM Voltage
Collector-Emitter Voltage
F miller Basa Voltage
Collector Current - Continuous
Peak
Bale Current
Total Power Diisipationffl>TC • 25°C
Derate above 25°C
Operating and Storaoe Junction
Temperature flarigft
THERMAL CHARACTERISTICS
Cherecterirtic
Trivrrdal Hnittance, Junction ID COM
• Indicate* JEDEC R»ghiered Oiu
FIOUflE 1 -POWER DERATING
Symbol
«JC
Mm
1.25
2NS9S6
2N5988
Symfaal 2N5989 2N5987 2N5991
Unit
Vdc
Vdc
Vdc
Adc
Adc
VCB
VCEO
VEB
ic
>B
60
4O
80
EO
5.0
too
80
12
20
4.0
FO
TJ, T,,,
100
08
-6510
'150
Wain
w/°c
°c
flu i
—LJL
STYlE ?;
PIN 1. EMITTER
2. COLLECTOR
3. BASE
Unit
°C/W
NOTES:
1. DIM "D" UNCDNTflOtLEO IN ZON£ "H"
2. DIM "F"OIA THRU
3. HEAT SINK CONTACT AREA (BOTTOM)
< LEAOSV»ITHINOJ05"BADOFTnUE
POSITION (Tf) AT MAXIMUM MATERIAL
CONDITION.
MILLIMETERS
DIM MIN
MAX
12.83
INCHES
MAX
\(
16. U
11
3?
3.1?
351
s
\
V
0.635
0.495
ES
T7T
OJM"
osoT
5.131
0.043
OjM}
<; ssc
T67
-
no?
TdiT
TYT
\
IMS
YP
W
S
1
6Q
BO
100
l!0
tl
131
4.70.
\
TC. CMC riMfIIATum I»C1
NJ Semi-Conductors reserves the right to change test conditions, parameters limits and package dimensions without
notice information famished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to
press. However NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ
Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
2N5986, 2N5987, 2N5988 PIMP / 2N5989, 2N5991 NPN
•ELECTRICAL CHARACTERISTICS (T
c
- 26°C uiK»oth«wlM nowdl
I
OuncUrlMe
OFF CHARACTERISTICS
Coll»ctor-£fii|t»f Sunilnlng Volt**
(1C -0.2 Adc. IB -01
I
Symbol
|
Mix
Vdc
40
60
80
-
VCEOtwt)
3NEM6,2NS«m
2N6987
2NS888. 2N5991
Collector Cutoff Cufttnl
(V
C
E - » Vdc. I
B
- 0>
(V
CE
- 30 Vde. I
B
- 01
<V
CE
-40Vdc, I
B
-01
Collet toe Cutoff Currant
(V
C
E - 60 Vdc, V
BE
(offl
M
«•« Vdc)
(V
CE
-80Vdc, V
B6(oI()
- I.BVdc)
(VcE * 100 Vdc. VBE(off) - '
B
V<fc>
(V
C
E - 40 Vdc. VBEIoff) ' '•">
vdc
-
T
C - >26°C)
(V
C
E • 60 Vdc. VBE(oit) " 1-8 Vdc. TC - taS'O
|V
C
E - 80 Vdc. V
B
E(oil) - 1.5 Vdo, TC - 136°C)
Emitter Cutoff Current
|V
BE
- CJ) Vdc. Ic-OI
ON CHARACTERISTICS
DC Currtnt Q»ln
'CEO
2NB988. 2N5969
2N5987.
2NB388, 2NS991
mAdc
-
2.0
2.0
2.0
MAdc
ICEX
3N5986, 2N5989
2N5M7
2NS888, 2N6991
2NS9S8, 2N69B9
2N6987
2N6988, 2N8991
<EBO
-
200
200
300
2.O
2.0
2.0
1.0
mAdc
_
mAdc
He - 1 .6 Adc. VCE • 2.0 Vdc)
(I
C
- «.0 Ads, V
CE
- 2.0 Vdc)
UC - 1 2 Adc, VCE » 2-0 Vdc)
Colloctor-Emitttr Stturation Valtiai
»FE
•4O
20
7.O
VcE(m)
120
Vdc
-
0,6
1.7
Vdc
2.8
Vdc
-
t.4
(Irj - 6.0 Adc, IB - O.6 Adc)
[l
C
-'2Adc, I
B
- t.SAdcl
BtK-EmiturSMurnlon Voitwt
(l
c
= 12Adc,l
B
-1,BAdcl
Bnt-Emlmr On Voluai
VBEItM)
VBEIonl
_
(I
C
" 6.0 Adc, VCE * 2-0 Vdc)
DYNAMIC CHARACTERISTICS
Currenl.Qiln — Bmdwfdth Product
(1C - 0-» Adc, VCE - 10 VdC, f
tMt
• 1 -0 MHz)
Output CapKltinc*
<VCB - 10 Vdc, IE • 0, f • 1 0 MHt)
Sm»ll«lgn«l Currant Gain
2N6986 thru 2N5988
2N69B9. 2N6991
«T
2.0
Cob
-
"f.
20
MHz
pf
600
300
_
-
(l« =• 2.0 Adc, VCE • «-0 Vdc. «-1.0 kHz)
•IndkiMi JEDEC ngglitwM OeM.
FIGURE 2 - SWITCHING TIMES TEST CIRCUIT
FIGURE 3 - TURN-ON TIME
vcc
•30V
OUTY CYCIE • 10*
~
-<V
ft tat
*C VARIED TO OBTAIN DESIRf Q ClWKf NT LEVCIS
01 MOST IE FAST RECOVERY TYPE, r,
MUMOO UStO AIOVIIJ »100 m»
MS06IMOSEO SElONIg -100 mA
Far PNP t«« circuit ravern dladt ind volliaa polirltl«i
ii.iiai««
_
0.02
O.S
U
24
1C. COLLECTOR CURRENT (AMR
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参数对比
与2NS9S6相近的元器件有:2N5987、2N5989、2N5991。描述及对比如下:
型号 2NS9S6 2N5987 2N5989 2N5991
描述 HIGH POWER PLASTIC COMPLEMENTARY SILICON POWER TRANSISTORS HIGH POWER PLASTIC COMPLEMENTARY SILICON POWER TRANSISTORS HIGH POWER PLASTIC COMPLEMENTARY SILICON POWER TRANSISTORS HIGH POWER PLASTIC COMPLEMENTARY SILICON POWER TRANSISTORS
Reach Compliance Code - unknow unknow unknow
Base Number Matches - 1 1 1
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E0 E1 E2 E3 E4 E5 E6 E7 E8 E9 EA EB EC ED EE EF EG EH EI EJ EK EL EM EN EO EP EQ ER ES ET EU EV EW EX EY EZ F0 F1 F2 F3 F4 F5 F6 F7 F8 F9 FA FB FC FD FE FF FG FH FI FJ FK FL FM FN FO FP FQ FR FS FT FU FV FW FX FY FZ G0 G1 G2 G3 G4 G5 G6 G7 G8 G9 GA GB GC GD GE GF GG GH GI GJ GK GL GM GN GO GP GQ GR GS GT GU GV GW GX GZ H0 H1 H2 H3 H4 H5 H6 H7 H8 HA HB HC HD HE HF HG HH HI HJ HK HL HM HN HO HP HQ HR HS HT HU HV HW HX HY HZ I1 I2 I3 I4 I5 I6 I7 IA IB IC ID IE IF IG IH II IK IL IM IN IO IP IQ IR IS IT IU IV IW IX J0 J1 J2 J6 J7 JA JB JC JD JE JF JG JH JJ JK JL JM JN JP JQ JR JS JT JV JW JX JZ K0 K1 K2 K3 K4 K5 K6 K7 K8 K9 KA KB KC KD KE KF KG KH KI KJ KK KL KM KN KO KP KQ KR KS KT KU KV KW KX KY KZ
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