SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2SA1187
DESCRIPTION
·With MT-200 package
·High current capability
APPLICATIONS
·Audio and general purpose applications
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
Fig.1 simplified outline (MT-200) and symbol
DESCRIPTION
Absolute maximum ratings(Ta=
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25
Open emitter
Open base
Open collector
CONDITIONS
VALUE
-150
-150
-5
-12
-2
120
150
-55~150
UNIT
V
V
V
A
A
W
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Output capacitance
Transition frequency
CONDITIONS
I
C
=-25mA ;I
B
=0
I
C
=-5A; I
B
=-0.5A
V
CB
=-150V; I
E
=0
V
EB
=-5V; I
C
=0
I
C
=-3A ; V
CE
=-4V
I
E
=0 ; V
CB
=-80V;f=1MHz
I
E
=1A ; V
CE
=-12V
50
MIN
-150
2SA1187
SYMBOL
V
(BR)CEO
V
CEsat
I
CBO
I
EBO
h
FE
C
ob
f
T
TYP.
MAX
UNIT
V
-2.0
-0.1
-0.1
V
mA
mA
110
60
pF
MHz
h
FE
Classifications
O
50-100
P
70-140
Y
90-180
2
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SA1187
Fig.2 outline dimensions
3
测试/测量
