JMnic
Product Specification
Silicon PNP Power Transistors
DESCRIPTION
・With
TO-126 package
・Complement
to type 2SC2911
・High
breakdown voltage
・Fast
switching speed
APPLICATIONS
・High-voltage
switching and
AF 100W predriver applications
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
2SA1209
Absolute maximum ratings(Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-Peak
T
a
=25℃
P
C
Collector power dissipation
T
C
=25℃
T
j
T
stg
Junction temperature
Storage temperature
10
150
-55~150
℃
℃
CONDITIONS
Open emitter
Open base
Open collector
VALUE
-180
-160
-5
-0.14
-0.20
1.0
W
UNIT
V
V
V
A
A
JMnic
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
CEsat
I
CBO
I
EBO
h
FE
f
T
C
ob
PARAMETER
Collector-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Transition frequency
Output capacitance
CONDITIONS
I
C
=-50mA; I
B
=-5mA
V
CB
=-80V; I
E
=0
V
EB
=-4V; I
C
=0
I
C
=-10mA ; V
CE
=-5V
I
C
=-10mA ; V
CE
=-10V
I
E
=0 ; V
CB
=-10V;f=1MHz
100
MIN
2SA1209
TYP.
MAX
-0.4
-0.1
-0.1
400
UNIT
V
μA
μA
150
4.0
MHz
pF
Switching times resistive load
t
on
t
s
t
f
Turn-on time
Storage time
Fall time
I
C
=10mA I
B1
=-I
B2
=1mA
0.1
1.5
0.1
μs
μs
μs
h
FE
Classifications
R
100-200
S
140-280
T
200-400
2
JMnic
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SA1209
Fig.2 Outline dimensions
3
JMnic
Product Specification
Silicon PNP Power Transistors
2SA1209
4
嵌入式系统
