SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2SA1386 2SA1386A
DESCRIPTION
·With TO-3PN package
·Complement to type 2SC3519/3519A
APPLICATIONS
·Audio and general purpose
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
DESCRIPTION
Absolute maximum ratings(Ta=
)
SYMBOL
PARAMETER
2SA1386
V
CBO
Collector-base voltage
2SA1386A
2SA1386
V
CEO
Collector-emitter voltage
2SA1386A
V
EBO
I
C
I
B
P
C
T
j
T
stg
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25
Open collector
Open base
-180
-5
-15
-4
130
150
-55~150
V
A
A
W
Open emitter
-180
-160
V
CONDITIONS
VALUE
-160
V
UNIT
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
2SA1386
I
C
=-25mA ;I
B
=0
2SA1386A
I
C
=-5A; I
B
=-0.5A
V
CB
=-160V; I
E
=0
CONDITIONS
SYMBOL
2SA1386 2SA1386A
MIN
-160
TYP.
MAX
UNIT
V
(BR)CEO
Collector-emitter
breakdown voltage
V
-180
-2.0
V
V
CEsat
Collector-emitter saturation voltage
2SA1386
2SA1386A
I
CBO
Collector cut-off
Current
-100
V
CB
=-180V; I
E
=0
V
EB
=-5V; I
C
=0
I
C
=-5A ; V
CE
=-4V
I
E
=0 ; V
CB
=10V;f=1MHz
I
C
=-2A ; V
CE
=-12V
50
500
40
-100
180
µA
I
EBO
h
FE
C
ob
f
T
Emitter cut-off current
DC current gain
Output capacitance
Transition frequency
µA
pF
MHz
Switching times
t
on
t
s
t
f
Turn-on time
Storage time
Fall time
I
C
=-5A;R
L
=4C
I
B1
=-I
B2
=-1A
V
CC
=40V
0.30
0.70
0.20
µs
µs
µs
h
FE
Classifications
O
50-100
P
70-140
Y
90-180
2
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SA1386 2SA1386A
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2SA1386 2SA1386A
4
