JMnic
Product Specification
Silicon PNP Power Transistors
2SA940
DESCRIPTION
・With
TO-220 package
・Complement
to type 2SC2073
APPLICATIONS
・Power
amplifier applications
・Vertical
output applications
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
Absolute maximum ratings (Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)
Base current
T
a
=25℃
P
C
Collector power dissipation
T
C
=25℃
T
j
T
stg
Junction temperature
Storage temperature
25
150
-55~150
℃
℃
CONDITIONS
Open emitter
Open base
Open collector
VALUE
-150
-150
-5
-1.5
-0.5
1.5
W
UNIT
V
V
V
A
A
JMnic
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
CEsat
V
BE
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
C
OB
f
T
PARAMETER
Collector-emitter saturation voltage
Base-emitter on voltage
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Output capacitance
Transition frequency
CONDITIONS
I
C
=-0.5A; I
B
=-50m A
I
C
=-0.5A ; V
CE
=-10V
I
C
=-1mA; I
E
=0
I
C
=-5mA; I
B
=0
I
E
=-1mA; I
C
=0
V
CB
=-120V;I
E
=0
V
EB
=-5V; I
C
=0
I
C
=-0.5A ; V
CE
=-10V
I
E
=0; V
CB
=-10V;f=1MHz
I
C
=-0.5A ; V
CE
=-10V
40
55
4
-150
-150
-5
-0.75
MIN
TYP.
2SA940
MAX
-1.5
-0.85
UNIT
V
V
V
V
V
-10
-10
140
μA
μA
pF
MHz
2
JMnic
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SA940
Fig.2 outline dimensions (unindicated tolerance:±0.10 mm)
3
JMnic
Product Specification
Silicon PNP Power Transistors
2SA940
4
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