JMnic
Product Specification
Silicon PNP Power Transistors
2SB1018
DESCRIPTION
・With
TO-220F package
・High
collector current
・Low
collector saturation voltage
・Complement
to type 2SD1411
APPLICATIONS
・Power
amplifier applications
・High
current switching applications
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector
Base
Fig.1 simplified outline (TO-220F) and symbol
Absolute maximum ratings(Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
PARAMETER
Collector-base voltage
Collector -emitter voltage
Emitter-base voltage
Collector current
Base current
T
C
=25℃
P
C
Collector power dissipation
T
a
=25℃
T
j
T
stg
Junction temperature
Storage temperature
2
150
-55~150
℃
℃
Open emitter
Open base
Open collector
CONDITIONS
VALUE
-100
-80
-5
-7
-1
30
W
UNIT
V
V
V
A
A
JMnic
Product Specification
Silicon PNP Power Transistors
2SB1018
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
(BR)CEO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE-1
h
FE-2
f
T
C
OB
PARAMETER
Collector-emitter breakdownvoltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
Transition frequency
Collector output capacitance
CONDITIONS
I
C
=-50mA; I
B
=0
I
C
=-4A ;I
B
=-0.4A
I
C
=-4A ;I
B
=-0.4A
V
CB
=-100V; I
E
=0
V
EB
=-5V; I
C
=0
I
C
=-1A ; V
CE
=-1V
I
C
=-4A ; V
CE
=-1V
V
CE
=-4V;I
C
=-1A
f=1MHz ; V
CB
=-10V;I
E
=0
70
30
10
250
MHz
pF
MIN
-80
-0.3
-0.9
-0.5
-1.4
-5
-5
240
TYP.
MAX
UNIT
V
V
V
μA
μA
Switching times
t
on
t
stg
t
f
Turn-on time
Storage time
Fall time
I
B1
=-I
B2
=-0.3A
V
CC
=30V ,R
L
=10Ω
0.4
2.5
0.5
μs
μs
μs
h
FE-1
Classifications
O
70-140
Y
120-240
2
JMnic
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SB1018
Fig.2 Outline dimensions
3
JMnic
Product Specification
Silicon PNP Power Transistors
2SB1018
4
