JMnic
Product Specification
Silicon PNP Power Transistors
2SB1065
DESCRIPTION
・With
TO-126 package
・Complement
to type 2SD1506
・Low
collector saturation voltage
APPLICATIONS
・For
use in low frequency power
amplifier applications
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
・
Absolute maximum ratings(Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
D
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
Total power dissipation
Junction temperature
Storage temperature
T
C
=25℃
CONDITIONS
Open emitter
Open base
Open collector
VALUE
-60
-50
-5
-3
-4.5
10
150
-55~150
UNIT
V
V
V
A
A
W
℃
℃
JMnic
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
2SB1065
TYP.
MAX
UNIT
V
(BR)CEO
Collector-emitter breakdown voltage
I
C
=-1mA ,I
B
=0
-50
V
V
(BR)CBO
V
(BR)EBO
Collector-base breakdown voltage
I
C
=-50μA ,I
E
=0
I
E
=-50μA ,I
C
=0
-60
V
Emitter-base breakdown voltage
-5
V
V
CEsat
Collector-emitter saturation voltage
I
C
=-2A; I
B
=-0.2A
-1.0
V
V
BEsat
Base-emitter saturation voltage
I
C
=-2A; I
B
=-0.2A
-1.5
V
μA
μA
I
CBO
Collector cut-off current
V
CB
=-40V; I
E
=0
-1.0
I
EBO
Emitter cut-off current
V
EB
=-4V; I
C
=0
-1.0
h
FE
C
OB
DC current gain
I
C
=-0.5A ; V
CE
=-3V
I
E
=0 ; V
CB
=-10V,f=1MHz
56
390
Output capacitance
50
pF
f
T
Transition frequency
I
C
=-0.5A ; V
CE
=-5V
70
MHz
h
FE
Classifications
N
56-120
P
82-180
Q
120-270
R
180-390
2
JMnic
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SB1065
Fig.2 Outline dimensions
3
