JMnic
Product Specification
Silicon PNP Power Transistors
2SB1069 2SB1069A
DESCRIPTION
・With
TO-220 package
・High
speed switching
・Low
collector saturation voltage
APPLICATIONS
・For
low-voltage switching applications
PINNING
PIN
1
2
3
Emitter
Collector;connected to
mounting base
Base
Fig.1 simplified outline (TO-220) and symbol
DESCRIPTION
Absolute maximum ratings(Ta=25
℃)
SYMBOL
PARAMETER
2SB1069
V
CBO
Collector-base voltage
2SB1069A
2SB1069
V
CEO
Collector-emitter voltage
2SB1069A
V
EBO
I
C
I
CM
Emitter-base voltage
Collector current
Collector current-peak
T
a
=25℃
P
C
Collector power dissipation
T
C
=25℃
T
j
T
stg
Junction temperature
Storage temperature
25
150
-55~150
℃
℃
Open collector
Open base
-40
-5
-4
-8
1.4
W
V
A
A
Open emitter
-50
-20
V
CONDITIONS
VALUE
-40
V
UNIT
JMnic
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
2SB1069
V
(BR)CEO
Collector-emitter
breakdown voltage
2SB1069A
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE-1
h
FE-2
f
T
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
Transition frequency
I
C
=-2A; I
B
=-0.1A
I
C
=-2A; I
B
=-0.1A
V
CB
=-40V; I
E
=0
V
EB
=-5V; I
C
=0
I
C
=-0.1A ; V
CE
=-2V
I
C
=-1A ; V
CE
=-2V
I
C
=-0.5A ; V
CE
=-5V
I
C
=-10mA ,I
B
=0
CONDITIONS
2SB1069 2SB1069A
MIN
-20
TYP.
MAX
UNIT
V
-40
-0.5
-1.5
-50
-50
45
60
150
260
MHz
V
V
μA
μA
Switching times
t
on
t
stg
t
f
Turn-on time
Storage time
Fall time
I
C
=-2A; I
B1
=-I
B2
=-0.2A
0.3
0.4
0.1
μs
μs
μs
h
FE-2
classifications
R
60-120
Q
90-180
P
130-260
2
JMnic
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SB1069 2SB1069A
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
3
