Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB1097
DESCRIPTION
・With
TO-220Fa package
・Low
collector saturation voltage
・Complement
to type 2SD1588
APPLICATIONS
・For
low frequency power amplifier and
low speed switching applications
PINNING
PIN
1
2
3
Emitter
Collector
Base
DESCRIPTION
・
Absolute maximum ratings(Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
PARAMETER
固电
IN
导½
半
Collector-base voltage
Collector -emitter voltage
Emitter-base voltage
Collector current
ANG
CH
Open emitter
Open base
MIC
E SE
CONDITIONS
OR
UCT
ND
O
VALUE
-80
-60
-5
-7
UNIT
V
V
V
A
Open collector
T
a
=25℃
P
C
Collector power dissipation
T
C
=25℃
T
j
T
stg
Junction temperature
Storage temperature
2.0
W
30
150
-55~150
℃
℃
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE
PARAMETER
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
CONDITIONS
I
C
=-30mA; I
B
=0
I
C
=-1mA; I
E
=0
I
E
=-1mA; I
C
=0
I
C
=-5A ;I
B
=-0.5A
I
C
=-5A ;I
B
=-0.5A
V
CB
=-60V; I
E
=0
V
EB
=-5V; I
C
=0
I
C
=-3A ; V
CE
=-1V
40
MIN
-60
-80
-5
2SB1097
TYP.
MAX
UNIT
V
V
V
-0.5
-1.5
-10
-10
V
V
μA
μA
h
FE
Classifications
M
40-80
L
电半
固
IN
60-120
DC current gain
导½
K
ANG
CH
100-200
MIC
E SE
OR
UCT
ND
O
200
2
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SB1097
固电
IN
导½
半
MIC
E SE
ANG
CH
OR
UCT
ND
O
Fig.2 Outline dimensions (unindicated tolerance:
±0.15
mm)
3
