Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB1223
DESCRIPTION
・With
TO-220F package
・Complement
to type 2SD1825
・High
DC current gain.
・Large
current capacity and wide ASO.
・DARLINGTON
APPLICATIONS
・Suitable
for use in control of motor drivers,
printer hammer drivers,and constant-voltage
regulators.
PINNING
PIN
1
2
3
Base
Collector
DESCRIPTION
固电
Emitter
导½
半
PARAMETER
Fig.1 simplified outline (TO-220F) and symbol
Absolute maximum ratings (Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
IN
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
ANG
CH
MIC
E SE
Open emitter
Open base
Open collector
OR
UCT
ND
O
VALUE
-70
-60
-6
-4
-6
CONDITIONS
UNIT
V
V
V
A
A
T
C
=25℃
P
C
Collector dissipation
T
a
=25
T
j
T
stg
Junction temperature
Storage temperature
20
W
2
150
-55~150
℃
℃
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
2SB1223
MAX
UNIT
V
(BR)CBO
Collector-base breakdown voltage
I
C
=-5mA; I
E
=0
-70
V
V
(BR)CEO
Collector-emitter breakdown voltage
I
C
=-50mA; R
BE
=∞
-60
V
V
CEsat
Collector-emitter saturation voltage
I
C
=-2A ; I
B
=-4mA
-1.0
-1.5
V
V
BEsat
Base-emitter saturation voltage
I
C
=-2A ; I
B
=-4mA
-2.0
V
I
CBO
Collector cut-off current
V
CB
=-40V;I
E
=0
-0.1
mA
I
EBO
Emitter cut-off current
V
EB
=-5V;I
C
=0
-3.0
mA
h
FE
DC current gain
f
T
Switching times
固电
IN
Transition frequency
导½
半
I
C
=-2A ; V
CE
=-2V
2000
5000
I
C
=-2A ; V
CE
=-5V
t
on
Turn-on time
t
stg
Storage time
ANG
CH
MIC
E SE
DUC
ON
20
OR
T
MHz
0.5
μs
I
C
=500I
B1
=-500I
B2
=-2A
V
CC
=-20V ,R
L
=10Ω
1.4
μs
t
f
Fall time
1.2
μs
2
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SB1223
固电
IN
导½
半
MIC
E SE
ANG
CH
OR
UCT
ND
O
Fig.2 Outline dimensions
3
