SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB1566
DESCRIPTION
·With TO-220F package
·Excellent DC current gain characteristics
·Low collector saturation voltage
·Wide SOA (safe operating area)
·Complement to type 2SD2395
PINNING
PIN
1
2
3
Base
Collector
Emitter
Fig.1 simplified outline (TO-220F) and symbol
DESCRIPTION
Absolute maximum ratings (Ta=25
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
T
a
=25
P
C
Collector dissipation
T
C
=25
T
j
T
stg
Junction temperature
Storage temperature
25
150
-55~150
CONDITIONS
Open emitter
Open base
Open collector
MAX
-60
-50
-5
-3
-4.5
2
W
UNIT
V
V
V
A
A
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Output capacitance
Transition frequency
CONDITIONS
I
C
=-1mA ;I
B
=0
I
C
=-50µA ;I
E
=0
I
E
=-50µA ;I
C
=0
I
C
=-2A ;I
B
=-0.2A
I
C
=-2A ;I
B
=-0.2A
V
CB
=-60V; I
E
=0
V
EB
=-7V; I
C
=0
I
C
=-0.5A ; V
CE
=-5V
I
E
=0 ; V
CB
=-10V;f=1MHz
I
C
=-0.5A ; V
CE
=-5V
100
40
60
MIN
-50
-60
-5
2SB1566
SYMBOL
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE
C
OB
f
T
TYP.
MAX
UNIT
V
V
V
-1.0
-1.5
-1.0
-1.0
320
V
V
µA
µA
pF
MHz
h
FE
Classifications
E
100-200
F
160-320
2
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SB1566
Fig.2 Outline dimensions
3
