Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB744 2SB744A
DESCRIPTION
・With
TO-126 package
・Complement
to type 2SD794/794A
・Excellent
h
FE
linearity
APPLICATIONS
・For
audio frequency power
amplifier applications
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
・
Absolute maximum ratings(Ta=25
℃)
SYMBOL
V
CBO
PARAMETER
固电
IN
导½
半
Collector-base voltage
V
CEO
Collector-emitter voltage
HA
C
ES
NG
2SB744
2SB744A
MIC
E
Open emitter
Open base
Open collector
CONDITIONS
OR
UCT
ND
O
VALUE
-70
-45
-60
-5
-3
-5
-0.6
UNIT
V
V
V
EBO
I
C
I
CM
I
B
Emitter-base voltage
Collector current (DC)
Collector current-Peak
V
A
A
A
Base current
T
a
=25℃
1
W
10
150
-55~150
℃
℃
P
C
Collector power dissipation
T
C
=25℃
T
j
T
stg
Junction temperature
Storage temperature
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
2SB744
V
(BR)CEO
Collector-emitter
breakdown voltage
2SB744A
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE-1
h
FE-2
f
T
C
OB
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
I
C
=-1.5A ;I
B
=-0.15A
I
C
=-1.5A ;I
B
=-0.15A
V
CB
=-45V; I
E
=0
V
EB
=-3V; I
C
=0
I
C
=-20mA ; V
CE
=-5V
I
C
=-0.5A ; V
CE
=-5V
I
C
=-0.1A ; V
CE
=-5V
I
C
=-10mA; I
B
=0
CONDITIONS
2SB744 2SB744A
MIN
-45
TYP.
MAX
UNIT
V
-60
-0.5
-0.8
-2.0
-2.0
-1
-1
30
60
120
100
45
320
V
V
μA
μA
固电
IN
O
Transition frequency
导½
半
Y
Collector output capacitance
h
FE-2
Classifications
R
60-120
ANG
CH
160-320
MIC
E SE
f=1MHz ; V
CB
=-10V;I
E
=0
DUC
ON
60
OR
T
MHz
pF
100-200
2
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SB744 2SB744A
固电
IN
导½
半
MIC
E SE
ANG
CH
OR
UCT
ND
O
Fig.2 Outline dimensions
3
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB744 2SB744A
固电
IN
导½
半
MIC
E SE
ANG
CH
OR
UCT
ND
O
4
