Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB824
DESCRIPTION
・With
TO-220 package
・Low
collector-emitter saturation voltage
・Complement
to type 2SD1060
APPLICATIONS
・Suitable
for relay drivers,high-speed
Inverters,converters,and other general
large-current switching applications
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
Absolute maximum ratings (Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
固电
IN
导½
半
Collector-emitter voltage
Emitter-base voltage
ANG
CH
MIC
E SE
Open emitter
Open base
Open collector
CONDITIONS
OR
UCT
ND
O
VALUE
-60
-50
-6
-5
-9
UNIT
V
V
V
A
A
W
℃
℃
Collector current (DC)
Collector current (Pulse)
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25℃
30
150
-55~150
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CEsat
I
CBO
I
EBO
h
FE-1
h
FE-2
C
OB
f
T
PARAMETER
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
Output capacitance
CONDITIONS
I
C
=-1mA ;R
BE
=∞
I
C
=-1mA ;I
E
=0
I
E
=-1mA ;I
C
=0
I
C
=-3A; I
B
=-0.3A
V
CB
=-40V;I
E
=0
V
EB
=-4V; I
C
=0
I
C
=-1A ; V
CE
=-2V
I
C
=-3A ; V
CE
=-2V
I
E
=0 ; V
CB
=-10V;f=1MHz
I
C
=-1A ; V
CE
=-5V
70
30
MIN
-50
-60
-6
TYP.
2SB824
MAX
UNIT
V
V
V
-0.4
-0.1
-0.1
280
V
mA
mA
Switching times
t
on
t
s
t
f
固电
IN
Transition frequency
导½
半
Turn-on time
Storage time
Fall time
ANG
CH
S
140-280
MIC
E SE
OR
UCT
ND
O
30
0.1
0.7
0.2
160
pF
MHz
μs
μs
μs
I
C
=-2.0A; I
B1
=- I
B2
=-0.2A
h
FE-1
classifications
Q
70-140
R
100-200
2
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SB824
固电
IN
导½
半
MIC
E SE
ANG
CH
OR
UCT
ND
O
Fig.2 outline dimensions (unindicated tolerance:±0.10 mm)
3
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB824
固电
IN
导½
半
MIC
E SE
ANG
CH
OR
UCT
ND
O
4
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