SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB824
DESCRIPTION
·With TO-220 package
·Low collector-emitter saturation voltage
·Complement to type 2SD1060
APPLICATIONS
·Suitable for relay drivers,high-speed
Inverters,converters,and other general
large-current switching applications
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
Absolute maximum ratings (Ta=25
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)
Collector current (Pulse)
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25
CONDITIONS
Open emitter
Open base
Open collector
VALUE
-60
-50
-6
-5
-9
30
150
-55~150
UNIT
V
V
V
A
A
W
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
Output capacitance
Transition frequency
CONDITIONS
I
C
=-1mA ;R
BE
=8
I
C
=-1mA ;I
E
=0
I
E
=-1mA ;I
C
=0
I
C
=-3A; I
B
=-0.3A
V
CB
=-40V;I
E
=0
V
EB
=-4V; I
C
=0
I
C
=-1A ; V
CE
=-2V
I
C
=-3A ; V
CE
=-2V
I
E
=0 ; V
CB
=-10V;f=1MHz
I
C
=-1A ; V
CE
=-5V
70
30
MIN
-50
-60
-6
SYMBOL
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CEsat
I
CBO
I
EBO
h
FE-1
h
FE-2
C
OB
f
T
2SB824
TYP.
MAX
UNIT
V
V
V
-0.4
-0.1
-0.1
280
V
mA
mA
160
30
pF
MHz
Switching times
t
on
t
s
t
f
Turn-on time
Storage time
Fall time
I
C
=-2.0A; I
B1
=- I
B2
=-0.2A
0.1
0.7
0.2
µs
µs
µs
h
FE-1
classifications
Q
70-140
R
100-200
S
140-280
2
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SB824
Fig.2 outline dimensions (unindicated tolerance:±0.10 mm)
3
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB824
4
51单片机
