JMnic
Product Specification
Silicon PNP Power Transistors
DESCRIPTION
・With
TO-220 package
・Low
collector saturation voltage
・Large
current capacity.
・Complement
to type 2SD1212
APPLICATIONS
・Suitable
for relay drivers, high-speed
inverters,converters, and other genral
large current switching applications.
・High-speed
switching applications
PINNING
PIN
1
2
3
Emitter
Collector;connected to
mounting base
Base
DESCRIPTION
2SB903
Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings (Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
Open emitter
Open base
Open collector
CONDITIONS
VALUE
-60
-30
-6
-12
-20
1.75
P
C
Collector power dissipation
T
C
=25℃
T
j
T
stg
Junction temperature
Storage temperature
35
150
-55~150
℃
℃
W
UNIT
V
V
V
A
A
JMnic
Product Specification
Silicon PNP Power Transistors
2SB903
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
V
CEsat
I
CBO
I
EBO
h
FE-1
h
FE-2
f
T
PARAMETER
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Collector cut-offcurrent
Emitter cut-offcurrent
DC current gain
DC current gain
Transition frequency
CONDITIONS
I
C
=-1mA ; I
E
=0
I
C
=-1mA ;R
BE
=∞
I
E
=-1mA ; I
C
=0
I
C
=-5A, I
B
=-0.25A
V
CB
=-40V;I
E
=0
V
EB
=-4V;I
C
=0
I
C
=-1A ; V
CE
=-2V
I
C
=-6A ; V
CE
=-2V
I
C
=-1A ; V
CE
=-5V
70
30
120
MHz
MIN
-60
-30
-6
-0.5
-0.1
-0.1
280
TYP
MAX
UNIT
V
V
V
V
mA
mA
Switching times
t
on
t
stg
t
f
Turn-on time
Storage time
Fall time
I
C
=-5A ;I
B1
=-I
B2
=-0.5A;
V
CC
=-10V;R
L
=2Ω
0.10
0.30
0.03
μs
μs
μs
h
FE-1
classifications
Q
70-140
R
100-200
S
140-280
2
JMnic
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SB903
Fig.2 outline dimensions (unindicated tolerance:±0.10 mm)
3
JMnic
Product Specification
Silicon PNP Power Transistors
2SB903
4
