SMD Type
PNP Transistors
2SB928A
TO-252
+0.15
1.50
-0.15
Transistors
Unit: mm
■
Features
●
High collector-emitter voltage (Base open) V
CEO
●
High collector power dissipation P
C
+0.2
9.70
-0.2
+0.15
6.50
-0.15
+0.2
5.30
-0.2
+0.1
2.30
-0.1
0.50
+0.8
-0.7
+0.1
0.80
-0.1
+0.15
0.50
-0.15
0.127
max
+0.28
1.50
-0.1
+0.25
2.65
-0.1
+0.15
5.55
-0.15
●
Complementary to 2SD1250A
2.3
4 .60
+0.15
-0.15
+
0.60
- 0.1
0.1
1 Base
2 Collector
3 Emitter
■
Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector current - Pulse
Collector Power Dissipation
Ta = 25°C
Junction Temperature
Storage Temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
J
T
stg
Rating
-200
-180
-6
-2
-3
30
1.3
150
-55 to 150
A
W
V
Unit
℃
■
Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
Base - emitter voltage
DC current gain
Transition frequency
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
EBO
V
CE(sat)
V
BE(sat)
V
BE
h
FE(1)
h
FE(2)
f
T
Test Conditions
Ic= -500 μA， I
E
=0
Ic= -5 mA， I
B
=0
I
E
= -500μA， I
C
=0
V
CB
= -200V , I
E
=0
V
EB
= -4V , I
C
=0
I
C
=-500 mA, I
B
=-50mA
I
C
=-500 mA, I
B
=-50mA
V
CE
= -10V, I
C
= -400mA
V
CE
= -10V, I
C
= -150mA
V
CE
= -10V, I
C
= -400mA
V
CE
= -10V, I
C
= -500mA,f=10MHz
60
50
40
MHz
Min
-200
-180
-6
-50
-50
-1
-1.2
-1
240
V
uA
V
Typ
Max
Unit
■
Classification of h
fe(1)
Type
Range
2SB928A-Q
60-140
2SB928A-P
100-240
3
.8
0
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1
SMD Type
PNP Transistors
2SB928A
■
Typical Characterisitics
P
C
40
Transistors
T
a
−600
I
C
V
CE
T
C
= 25°C
I
B
=
−4.5
mA
−4.0
mA
−3.5
mA
−3.0
mA
−2.5
mA
I
C
–2.0
V
BE
V
CE
=
−10
V
Collector power dissipation P
C
(W)
Collector current I
−400
Collector current
C
(A)
I
30
(A)
(1)
(1)T
C
= T
a
(2)With a 50 mm× 50 mm × 2 mm
Al heat sink
(3)Without heat sink
(P
C
= 1.3 W)
−500
C
–1.6
25°
C
–1.2
T
C
=
100 C
°
20
−300
−2.0
mA
−1.5
mA
−1.0
mA
−
0.5 mA
– 0.8
−200
−25°
C
10
(2)
(3)
0
0
40
80
120
160
−100
– 0.4
0
0
−2
−4
−6
−8
−10
−12
0
0
– 0.2
−
0.4
−
0.6
−
0.8
−1.0
Ambient temperature T
a
(°C)
Collector-emitter voltage V
CE
(V)
Base-emitter voltage V
BE
(V)
Collector-emitter saturation voltage V
CE(sat)
(V)
V
CE(sat)
−10
I
C
I
C
/ I
B
=
10
10
4
h
FE
I
C
V
CE
=
−10
V
f
T
10
4
I
C
V
CE
=
−10
V
f = 10 MHz
T
C
= 25°C
Forward current transfer ratio
FE
h
Transition frequency
T
f (MHz)
10
3
T
C
= 100°C
10
2
25°C
−25°C
10
3
−1
T
C
=
100 C
°
25°
C
−25°
C
10
2
−
0.1
10
10
−
0.01
−
0.01
−
0.1
−1
C
1
−
0.01
−
0.1
−1
−10
1
−
0.01
−
0.1
−1
−10
Collector current I
(A)
Collector current I
C
(A)
Collector current
C
(A)
I
Saf e operati on area
–10
I
CP
t
=
0.5 ms
R
th
10
3
t
(1)Without heat sink
(2)With a 50 mm× 50 mm × 2 mm Al heat sink
(1)
(2)
Thermal resistance R
th
(°C/W)
Non repetitive pulse
T
C
= 25°C
10
2
Collector current
C
(A)
I
I
C
–1
t
=
5 ms
t
=
1 ms
10
t
=
300 ms
1
– 0.1
2SB0928A
10
−1
– 0.01
–1
–10
–100
–1000
10
−2
10
−4
10
−3
10
−2
10
−1
1
10
10
2
10
3
10
4
Collector-emitter voltage V
CE
(V)
Time t (s)
2
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