SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC1433
DESCRIPTION
·With TO-3 package
·High voltage ,high speed
APPLICATIONS
·For high voltage switching power
amplifier applications
PINNING(see fig.2)
PIN
1
2
3
Base
Emitter
Collector
Fig.1 simplified outline (TO-3) and symbol
DESCRIPTION
Absolute maximum ratings(Ta=
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
T
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature
T
C
=25
Open emitter
Open base
Open collector
CONDITIONS
VALUE
600
400
5
5
50
150
-55~150
UNIT
V
V
V
A
W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter sustaining voltage
Emitter-base breakdown votage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
CONDITIONS
I
C
=100mA; I
B
=0
I
E
=1.0mA; I
C
=0
I
C
=5 A;I
B
=1A
I
C
=5 A;I
B
=1A
V
CB
=600V;I
E
=0
V
EB
=5V; I
C
=0
I
C
=1A ; V
CE
=5V
20
MIN
400
5
2SC1433
SYMBOL
V
CEO(SUS)
V
(BR)EBO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE
TYP.
MAX
UNIT
V
V
1.5
2.0
0.1
0.1
300
V
V
mA
mA
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC1433
Fig.2 Outline dimensions
3
