SMD Type
Silicon NPN Epitaxial
2SC2619
SOT-23
+0.1
2.9
-0.1
+0.1
0.4
-0.1
Transistors
IC
Unit: mm
Features
+0.1
2.4
-0.1
+0.1
1.3
-0.1
High frequency amplifier.
1
2
0.95
+0.1
-0.1
+0.1
1.9
-0.1
0.55
0.4
3
+0.05
0.1
-0.01
0.97
+0.1
0.38
-0.1
+0.1
-0.1
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Rating
30
30
5
100
150
150
-55 to +150
Unit
V
V
V
mA
mW
Electrical Characteristics Ta = 25
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Gain bandwidth product
Collector output capacitance
Noise figure
Symbol
Testconditons
Min
30
30
5
0.5
0.5
60
200
1.1
0.75
230
3.5
5
V
V
MHz
pF
dB
Typ
Max
Unit
V
V
V
ìA
ìA
V
(BR)CBO
I
C
= 10ìA , I
E
= 0
V
(BR)CEO
I
C
= 1mA , R
BE
=
V
(BR)EBO
I
E
= 10ìA , I
C
= 0
I
CBO
I
EBO
h
FE
V
CB
= 20V, I
E
=0
V
EB
= 2V, I
C
=0
V
CE
= 12V , I
C
= 2mA
V
CE(sat)
I
C
= 10mA , I
B
= 1mA
V
BE
f
T
Cob
NF
V
CE
= 12V , I
C
= 2mA
V
CE
= 12V , I
C
= 2mA
V
CB
= 10V , I
E
=0, f = 1MHz
V
CE
= 6V, I
C
= 2mA, f = 1MHz, R
g
=
500Ù
h
FE
Classification
Marking
hFE
FB
60 120
FC
100 200
0-0.1
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