INCHANGE Semiconductor
isc
RF Product Specification
isc
Silicon NPN RF Transistor
2SC2759
DESCRIPTION
·Low
Noise
·High
Conversion Gain
G
cb
= 12.5dB TYP. @I
E
= -5mA, V
CB
= 10V
APPLICATIONS
·Designed
for use in VHF RF amplifier, local oscillator,mixer.
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
PARAMETER
VALUE
UNIT
V
CBO
Collector-Base Voltage
30
V
V
CEO
Collector-Emitter Voltage
14
V
V
EBO
Emitter-Base Voltage
3
V
I
C
Collector Current-Continuous
Collector Power Dissipation
@T
C
=25℃
Junction Temperature
50
mA
P
C
0.15
W
T
J
125
℃
T
stg
Storage Temperature Range
-55~125
℃
isc website：www.iscsemi.cn
1
INCHANGE Semiconductor
isc
RF Product Specification
isc
Silicon NPN RF Transistor
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
2SC2759
TYP.
MAX
UNIT
I
CBO
Collector Cutoff Current
V
CB
= 15V; I
E
= 0
0.1
μA
h
FE
DC Current Gain
I
C
= 5mA ; V
CE
= 10V
40
180
f
T
Current-Gain—Bandwidth Product
I
C
= 5mA ; V
CE
= 10V
1.5
2.0
GHz
C
OB
Output Capacitance
I
E
= 0 ; V
CB
= 10V;f= 1.0MHz
I
E
= -5mA ; V
CB
= 10V; f= 900MHz;
f
OSC
= 935MHz, 115 dBμV
1.0
1.3
pF
G
cb
Conversion Gain
10
12.5
dB
h
FE
Classification
Marking
h
FE
U21
40-80
U22
60-120
U23
90-180
isc website：www.iscsemi.cn
2
stm32/stm8
