JMnic
Product Specification
Silicon NPN Power Transistors
2SC2768
DESCRIPTION
・With
TO-220C package
・High
speed switching
・High
reliability
APPLICATIONS
・Switching
regulators
・Ultrasonic
generators
・High
frequency inverters
・General
purpose power amplifiers
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
DESCRIPTION
・
Absolute maximum ratings(Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25℃
Open emitter
Open base
Open collector
CONDITIONS
VALUE
250
200
7
6
1.5
40
150
-55~150
UNIT
V
V
V
A
A
W
℃
℃
THERMAL CHARACTERISTICS
SYMBOL
R
th j-C
PARAMETER
Thermal resistance junction case
MAX
3.0
UNIT
℃/W
JMnic
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
2SC2768
TYP.
MAX
UNIT
V
(BR)CEO
Collector-emitter breakdown voltage
I
C
=10mA ; I
B
=0
200
V
V
(BR)CBO
V
(BR)EBO
Collector-base breakdown voltage
I
C
=100μA ; I
E
=0
I
E
=100μA ; I
C
=0
250
V
Emitter-base breakdown voltage
7
V
V
CEsat
Collector-emitter saturation voltage
I
C
=2A; I
B
=0.8A
0.5
V
V
BEsat
Base-emitter saturation voltage
I
C
=2A; I
B
=0.8A
1.2
V
μA
μA
I
CBO
Collector cut-off current
V
CB
=250V ;I
E
=0
100
I
EBO
Emitter cut-off current
V
EB
=7V; I
C
=0
100
h
FE
DC current gain
I
C
=1A ; V
CE
=5V
20
Switching times
μs
μs
μs
t
on
Turn-on time
I
C
=4A; I
B1
=-I
B2
=-0.4A
R
L
=20Ω
1.0
t
stg
Storage time
2.0
t
f
Fall time
1.0
2
JMnic
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC2768
Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)
3
JMnic
Product Specification
Silicon NPN Power Transistors
2SC2768
4
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