2SC3052
Silicon Epitaxial Planar Transistor
FEATURES
Low collector to emitter saturation voltage.
Excellent linearity of DC forward current
gain.
Super mini package for easy mounting.
K
A
SOT-23
Dim
E
B
Min
2.70
1.10
Max
3.10
1.50
A
B
C
D
E
G
H
J
1.0 Typical
0.4 Typical
0.35
1.80
0.02
2.20
0.48
2.00
0.1
2.60
APPLICATIONS
For hybrid IC,small type machine low frequency voltage
amplify application.
C
D
G
H
J
0.1 Typical
K
All Dimensions in mm
ORDERING INFORMATION
Type No.
2SC3052
Marking
LE/LF/LG
Package Code
SOT-23
SOT-23
MAXIMUM RATING
@ Ta=25℃ unless otherwise specified
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j,
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Dissipation
Junction and Storage Temperature
Value
50
50
6
200
125
-55 to +150
Units
V
V
V
mA
mW
℃
ELECTRICAL CHARACTERISTICS
@ Ta=25℃ unless otherwise specified
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector to Emitter saturation voltage
Collector output capacitance
Transition frequency
Noise Figure
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
C
ob
f
T
NF
Test conditions
I
C
=100μA,I
E
=0
I
C
=0.1mA,I
B
=0
I
E
=100μA,I
C
=0
V
CB
=50V,I
E
=0
V
EB
=6V,I
C
=0
V
CE
=6V,I
C
=1mA
V
CE
=6V,I
C
=0.1mA
I
C
=100mA, I
B
=10mA
V
CB
=6V,I
E
=0,f=1MHz
V
CE
=6V, I
C
= 10mA
V
CE
=6V,I
E
=0.1mA,
f=1kHz,R
G
=2kΩ
2.5
200
20
150
90
0.3
V
pF
MHz
dB
MIN
50
50
6
0.1
0.1
800
TYP
MAX
UNIT
V
V
V
μA
μA
CLASSIFICATION
Rank
Range
Marking
OF
h
FE
E
150-300
LE
F
250-500
LF
G
400-800
LG
ht
t
p
:
//
Revision:20170701-P1
www.lgesemi
.c
o
m
mail:lge@lgesemi.com
2SC3052
Silicon Epitaxial Planar Transistor
TYPICAL CHARACTERISTICS
@ Ta=25℃ unless otherwise specified
Device
2SC3052
Package
SOT-23
Shipping
3000/Tape&Reel
ht
t
p
:
//
Revision:20170701-P1
www.lgesemi
.c
o
m
mail:lge@lgesemi.com
微控制器 MCU
