Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC3063
DESCRIPTION
・With
TO-126 package
・High
V
CEO
・Low
C
OB
APPLICATIONS
・For
TV video output amplification
PINNING（see Fig.2）
PIN
1
2
3
DESCRIPTION
Emitter
Collector
Base
Absolute maximum ratings (Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
C
T
j
T
stg
固电
Collector-base voltage
导½
半
PARAMETER
HA
INC
Collector current
Collector-emitter voltage
Emitter-base voltage
ES
NG
Open emitter
Open base
MIC
E
CONDITIONS
OR
CT
NDU
O
VALUE
300
300
7
0.1
0.2
1.2
150
-55~150
UNIT
V
V
V
A
A
W
℃
℃
Open collector
Collector current-peak
Collector power dissipation
Junction temperature
Storage temperature
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
CEsat
V
BE
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
h
FE
C
OB
f
T
PARAMETER
Collector-emitter saturation voltage
Base-emitter on voltage
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
DC current gain
Output capacitance
Transition frequency
CONDITIONS
I
C
=30mA ;I
B
=3m A
I
C
=30mA ; V
CE
=10V
I
C
=10μA;I
E
=0
I
C
=100μA; I
B
=0
I
E
=10μA; I
C
=0
I
C
=5mA ; V
CE
=50V
I
E
=0; V
CB
=30V;f=1MHz
I
E
=-20mA ; V
CB
=30V
70
300
300
7
50
2.4
MIN
2SC3063
TYP.
MAX
1.5
1.2
UNIT
V
V
V
V
V
250
pF
MHz
固电
导½
半
ANG
CH
IN
MIC
E SE
DUC
ON
OR
T
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC3063
固电
导½
半
ANG
CH
IN
MIC
E SE
OR
CT
NDU
O
Fig.2 outline dimensions
3
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC3063
固电
导½
半
ANG
CH
IN
MIC
E SE
OR
CT
NDU
O
4
