SavantIC Semiconductor
Product Specification
Silicon NPN Darlington Power Transistors
DESCRIPTION
·With TO-220C package
·High switching speed
·High DC current gain
·Wide area of safe operation
·Complement to type 2SA1258
APPLICATIONS
·60V/3A for High-Speed Drivers Applications
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
DESCRIPTION
2SC3144
ABSOLUTE MAXIMUM RATINGS (T
a
=25 )
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CP
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current-DC
Collector current-Pulse
T
C
=25
P
C
Collector power dissipation
T
a
=25
T
j
T
stg
Junction temperature
Storage temperature
1.75
125
-55~125
CONDITIONS
Open emitter
Open base
Open collector
VALUE
70
60
5
3
5
20
W
UNIT
V
V
V
A
A
SavantIC Semiconductor
Product Specification
Silicon NPN Darlington Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Transition frequency
CONDITIONS
I
C
=50mA ;R
BE
=:
I
C
=5mA ;I
E
=0
I
C
=1.5A ,I
B
=3mA
I
C
=1.5A ,I
B
=3mA
V
CB
=40V, I
E
=0
V
EB
=5V; I
C
=0
I
C
=1.5A ; V
CE
=2V
I
C
=1.5A ; V
CE
=5V
2000
MIN
60
70
SYMBOL
V
(BR)CEO
V
(BR)CBO
V
CE(
sat
)-1
V
CE(
sat
)-2
I
CBO
I
EBO
h
FE
f
T
2SC3144
TYP.
MAX
UNIT
V
V
0.9
1.5
2.0
0.1
3.0
V
V
mA
mA
200
MHz
Switching times
t
on
t
s
t
f
Turn-on time
Storage time
Fall time
I
C
=1A ;I
B1
=-I
B2
=2m A
R
L
=20D,V
CC
=20V
0.3
1.2
0.2
µs
µs
µs
2
SavantIC Semiconductor
Product Specification
Silicon NPN Darlington Power Transistors
PACKAGE OUTLINE
2SC3144
Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)
3
RF/无线
