JMnic
Product Specification
Silicon NPN Power Transistors
DESCRIPTION
・With
TO-220C package
・High
collector breakdown voltage:
V
CEO
=800V(Min)
・Excellent
switching time:
t
r
=1.0μs(Max.)
t
f
=1.0μs(Max.@I
C
=0.8A
APPLICATIONS
・Switching
regulator and high voltage
switching applications
・High
speed DC-DC converter applications
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
DESCRIPTION
2SC3148
・
Absolute maximum ratings(Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
Base current
T
a
=25℃
P
C
Collector dissipation
T
C
=25℃
T
j
T
stg
Junction temperature
Storage temperature
40
150
-55~150
℃
℃
CONDITIONS
Open emitter
Open base
Open collector
VALUE
900
800
7
3
5
1
1.5
W
UNIT
V
V
V
A
A
A
JMnic
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
2SC3148
MAX
UNIT
V
(BR)CEO
Collector-emitter breakdown voltage
I
C
=10mA ; I
B
=0
800
V
V
(BR)CBO
Collector-base breakdown voltage
I
C
=1mA ; I
E
=0
900
V
V
CEsat
Collector-emitter saturation voltage
I
C
=0.8A; I
B
=0.16A
0.6
V
V
BEsat
Base-emitter saturation voltage
I
C
=0.8A; I
B
=0.16A
1.2
V
μA
I
CBO
Collector cut-off current
V
CB
=800V ;I
E
=0
100
I
EBO
Emitter cut-off current
V
EB
=7V; I
C
=0
1
mA
h
FE
DC current gain
I
C
=0.8A ; V
CE
=5V
10
Switching times
μs
t
r
Rise time
V
CC
≈400V;
I
C
=0.8A
I
B1
=0.08A;I
B2
=-0.20A;
R
L
=50Ω;Duty cycle≤1%
1.0
t
stg
Storage time
4.0
μs
t
f
Fall time
1.0
μs
2
JMnic
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC3148
Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)
3
JMnic
Product Specification
Silicon NPN Power Transistors
2SC3148
4
