JMnic
Product Specification
Silicon NPN Power Transistors
2SC3158
DESCRIPTION
・With
TO-220F package
・High
voltage
・High
switching speed
APPLICATIONS
・For
switching regulator applications
PINNING
PIN
1
2
3
Base
Collector
Emitter
Fig.1 simplified outline (TO-220F) and symbol
DESCRIPTION
Absolute maximum ratings (Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
Base current
Ta=25℃
P
C
Collector dissipation
T
C
=25℃
T
j
T
stg
Junction temperature
Storage temperature
60
150
-55~150
℃
℃
CONDITIONS
Open emitter
Open base
Open collector
VALUE
500
400
7
7
14
3
1. 5
W
UNIT
V
V
V
A
A
A
JMnic
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
2SC3158
TYP.
MAX
UNIT
V
(BR)CEO
Collector-emitter breakdown voltage
I
C
=10mA ; I
B
=0
400
V
V
(BR)CBO
Collector-base breakdown voltage
I
C
=1mA ; I
E
=0
500
V
V
(BR)EBO
Emitter-base breakdown voltage
I
E
=1mA ; I
C
=0
7
V
V
CEsat
Collector-emitter saturation voltage
I
C
=3A; I
B
=0.6A
1.0
V
V
BEsat
Base-emitter saturation voltage
I
C
=3A; I
B
=0.6A
1.2
V
I
CBO
Collector cut-off current
V
CB
=400V ;I
E
=0
10
μA
I
EBO
Emitter cut-off current
V
EB
=5V; I
C
=0
10
μA
h
FE-1
DC current gain
I
C
=1A ; V
CE
=5V
20
80
h
FE-2
DC current gain
I
C
=4A ; V
CE
=5V
10
2
JMnic
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC3158
Fig.2 outline dimensions
3
汽车电子
