SMD Type
NPN Transistors
2SC3360
SOT-23
+0.1
2.9
-0.1
+0.1
0.4
-0.1
Transistors
Unit: mm
+0.1
2.4
-0.1
●
High DC Current Gain h
FE
=90 to 450
●
Complementary to 2SA1330
1
2
0.95
+0.1
-0.1
+0.1
1.9
-0.1
0.55
●
High voltage V
CEO
=200V
+0.1
1.3
-0.1
■
Features
0.4
3
+0.05
0.1
-0.01
+0.1
0.97
-0.1
1.Base
2.Emitter
+0.1
0.38
-0.1
0-0.1
3.collector
■
Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
stg
Rating
200
200
5
100
200
150
-55 to 150
mA
mW
℃
V
Unit
■
Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base
breakdown voltage
Collector- base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
Base - emitter voltage
DC current gain
Turn-ON Time
Storage Time
Fall Time
Collector output capacitance
Transition frequency
*1.pulsed:PW
≤
350us,Duty Cycle
≤
2℅
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
EBO
*1
*1
*1
V
CE(sat)
V
BE(sat)
V
BE
h
FE
t
on
t
stg
t
f
C
ob
f
T
Test Conditions
Ic= 100 μA， I
E
= 0
Ic= 1 mA， R
BE
=
∞
I
E
= 100μA， I
C
= 0
V
CB
= 200 V , I
E
= 0
V
EB
= 5V , I
C
=0
I
C
=50mA, I
B
=5mA
I
C
=50mA, I
B
=5mA
V
CE
= 10V, I
C
= 10mA
V
CE
= 10V, I
C
= 10mA
V
CE
= 10V, I
C
= 50mA
I
C
=10mA,I
B1
=-I
B2
=1mA,V
CC
=10V
V
BE
(off)=-2.5V
V
CB
= 30V, I
E
=0,f=1MHz
V
CE
= 10V, I
C
= 10mA
Min
200
200
5
Typ
Max
Unit
V
0.1
0.1
0.1
0.8
90
50
200
200
0.15
1.3
1.6
2.8
160
0.3
1.2
450
uA
V
*1
us
pF
MHz
■
Classification of h
fe(1)
Type
Range
Marking
2SC3360-N15
90-180
N15
2SC3360-N16
135-270
N16
2SC3360-N17
200-450
N17
www.kexin.com.cn
1
SMD Type
NPN Transistors
2SC3360
■
Typical Characterisitics
Transistors
2
www.kexin.com.cn
SMD Type
NPN Transistors
2SC3360
■
Typical Characterisitics
Transistors
www.kexin.com.cn
3
Microchip MCU
